Integrating 2D layered materials with 3D bulk materials as van der Waals heterostructures for photodetections:Current status and perspectives  

作　　者：Weijie Liu Yiye Yu Meng Peng Zhihua Zheng Pengcheng Jian Yang Wang Yuanchen Zou Yongming Zhao Fang Wang Feng Wu Changqing Chen Jiangnan Dai Peng Wang Weida Hu 

机构地区：[1]Wuhan National Laboratory for Optoelectronics,Huazhong University of Science and Technology,Wuhan,the People's Republic of China [2]State Key Laboratory of Infrared Science and Technology,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai,thePeople's Republic of China [3]State Key Laboratory of ASIC and System,School of Microelectronics,Fudan University,Shanghai,the People's Republic of China

出　　处：《InfoMat》2023年第10期1-31,共31页信息材料（英文）

基　　金：Funding information National Natural Science Foundation of China,Grant/Award Numbers:61974174,61904184,62174061,62174063;National Key Research and Development Program of China,Grant/Award Number:2022YFB3605104;Key Research and Development Program of Hubei Province,Grant/Award Number:2021BAA071;Key Laboratory of Infrared Imaging Materials and Detectors,the Shanghai Institute of Technical Physics,the Chinese Academy of Sciences,Grant/Award Number:IIMDKFJJ-21-07;Fundamental Research Funds for the Central Universities,Grant/Award Number.2020kfyXJJS124;Director Fund of WNLO。

摘　　要：In the last decade,two-dimensional layered materials(2DLMs)have been drawing extensive attentions due to their unique properties,such as absence of surface dangling bonds,thickness-dependent bandgap,high absorption coeffi-cient,large specific surface area,and so on.But the high-quality growth and transfer of wafer-scale 2DLMs films is still a great challenge for the commerciali-zation of pure 2DLMs-based photodetectors.Conversely,the material growth and device fabrication technologies of three-dimensional(3D)semiconductors photodetectors tend to be gradually matured.However,the further improvement of the photodetection performance is limited by the difficult heterogeneous inte-gration or the inferior crystal quality via heteroepitaxy.Fortunately,2D/3D van der Waals heterostructures(vdWH)combine the advantages of the two types of materials simultaneously,which may provide a new platform for developing high-performance optoelectronic devices.Here,we first discuss the unique advantages of 2D/3D vdWH for the future development of photodetection field and simply introduce the structure categories,working mechanisms,and the typical fabrication methods of 2D/3D vdWH photodetector.Then,we outline the recent progress on 2D/3D vdWH-based photodetection devices integrating 2DLMs with the traditional 3D semiconductor materials,including Si,Ge,GaAs,AlGaN,SiC,and so on.Finally,we highlight the current challenges and pros-pects of heterointegrating 2DLMs with traditional 3D semiconductors toward photodetection applications.

关 键 词：PHOTODETECTORS three-dimensional semiconductors two-dimensional layered materials vander Waals heterostructures 

分 类 号：TB33[一般工业技术—材料科学与工程]