Two-dimensional Bi_(2)O_(2)Se nanosheets for sensitive and fast-response high-temperature photodetectors  

作　　者：Xiaobin Zou Ruize Wang Yong Sun Chengxin Wang 

机构地区：[1]State Key Laboratory of Optoelectronic Materials and Technologies,School of Materials Science and Engineering,Sun Yat-sen(Zhongshan)University,Guangzhou,510275,China

出　　处：《Journal of Materiomics》2023年第6期1024-1031,共8页无机材料学学报（英文）

基　　金：supported by the National Natural Science Foundation of China(Nos.91963210,52122206);Key Research Program of Guangdong Province(No.2020B0101690001).

摘　　要：Two-dimensional Bi_(2)O_(2)Se with unique crystal structure and ultrahigh carrier mobility has been catching widespread attention and demonstrated great potential in nanoelectronic and optoelectronic devices.The existence of lattice oxygen ensures its ultrahigh stability at ambient environment and make it promising for high-temperature applications.Here,through systematical characterizations,the high air stability of Bi_(2)O_(2)Se nanosheets at temperatures up to 250℃is evidently demonstrated.The fabricated photodetectors based on the as-grown Bi_(2)O_(2)Se nanosheets show high stability,high sensitivity(~5319 A/Wat 250℃with a bias of 1 V)and fast response(several milliseconds)from room temperature to 250℃.Besides,it was observed that the devices also show good photoresponse covering UV,visible and infrared regions at high temperatures.These results suggest their promising high-performance applications serving under harsh conditions.

关 键 词：Bi_(2)O_(2)Se CVD High-temperature photodetector High stability High sensitivity 

分 类 号：TN215[电子电信—物理电子学]