内禀硅晶格常数的22纳米线宽标准器研制  

Development of a 22 Nano Line Width Standard Based on Intrinsic Silicon Lattice Constants

作　　者：王芳[1] 施玉书[1] 张树[1] WANG Fang;SHI Yushu;ZHANG Shu(National Institute of Metrology,Beijing 100029,China)

机构地区：[1]中国计量科学研究院,北京100029

出　　处：《计量科学与技术》2024年第2期10-15,59,共7页Metrology Science and Technology

基　　金：国家重点研发计划(2021YFA1202801)。

摘　　要：纳米线宽作为典型纳米几何特征参量之一,其量值准确性对于先进制造等领域尤为重要。随着纳米尺度向着极小尺寸发展,测量精度要求达到亚纳米级,这给纳米线宽的精确测量带来了新的挑战。2018年第26届国际计量大会提出使用硅{220}晶面间距作为米定义的复现方式,这为原子尺度纳米线宽计量技术提供了新的思路与方法。基于多层膜沉积技术制备了22 nm内禀硅晶格的线宽标准器,采用高分辨透射电子显微镜,以标准器中的硅晶格常数为标尺实现对纳米线宽的直接测量,测量不确定度优于1 nm。The measurement accuracy of nano line widths,a critical nano geometric characteristic parameter,is of paramount importance in fields such as advanced manufacturing.As the scale of nanotechnology continues to shrink,achieving sub-nanometer measurement accuracy presents new challenges.The 26th General Conference on Weights and Measures(CGPM)in 2018 proposed using the silicon{220}lattice spacing as a secondary realization of the meter,providing a novel approach for atomic-level nano line width measurements.In this study,a 22 nm intrinsic silicon lattice line width standard was developed using multi-layer film deposition technology.Employing high-resolution transmission electron microscopy(HRTEM),the silicon lattice constant within the standard was used as a scale for direct nano line width measurement.The measurement uncertainty achieved is better than 1 nm.

关 键 词：计量学 硅晶格常数 纳米线宽 透射电子显微镜 关键尺寸 溯源性 

分 类 号：TB921[一般工业技术—计量学]