Vertical plane depth-resolved surface potential and carrier separation characteristics in flexible CZTSSe solar cells with over 12% efficiency  

作　　者：Dae-Ho Son Ha Kyung Park Dae-Hwan Kim Jin-Kyu Kang Shi-Joon Sung Dae-Kue Hwang Jaebaek Lee Dong-Hwan Jeon Yunae Cho William Jo Taeseon Lee JunHo Kim Sang-Hoon Nam Kee-Jeong Yang 

机构地区：[1]Division of Energy Technology,DGIST,Daegu,Republic of Korea [2]Research Center for Thin Film Solar Cells,DGIST,Daegu,Republic of Korea [3]Department of Physics,Ewha Womans University,Seoul,Republic of Korea [4]Department of Physics,Incheon National University,Incheon,Republic of Korea [5]Department of Mechanical Engineering,Massachusetts Institute of Technology,Cambridge,Massachusetts,USA

出　　处：《Carbon Energy》2024年第3期36-52,共17页碳能源（英文）

基　　金：supported by the National Research Foundation of Korea(NRF)grant funded by the Ministry of Science and ICT(No.2022M3J1A1085371);by the DGIST R&D programs of the Ministry of Science and ICT(23-ET-08 and 23-CoE-ET-01);supported by the Basic Science Research Program through the National Research Foundation of Korea(NRF)funded by the Ministry of Education(NRF-2018R1A6A1A03025340).

摘　　要：Cu2ZnSn(S,Se)4(CZTSSe)solar cells have resource distribution and economic advantages.The main cause of their low efficiency is carrier loss resulting from recombination of photo-generated electron and hole.To overcome this,it is important to understand their electron-hole behavior characteristics.To determine the carrier separation characteristics,we measured the surface potential and the local current in terms of the absorber depth.The elemental variation in the intragrains(IGs)and at the grain boundaries(GBs)caused a band edge shift and bandgap(Eg)change.At the absorber surface and subsurface,an upward Ec and Ev band bending structure was observed at the GBs,and the carrier separation was improved.At the absorber center,both upward Ec and Ev and downward Ec-upward Ev band bending structures were observed at the GBs,and the carrier separation was degraded.To improve the carrier separation and suppress carrier recombination,an upward Ec and Ev band bending structure at the GBs is desirable.

关 键 词：carrier separation CZTSSe flexible solar cell local current surface potential 

分 类 号：TM914.4[电气工程—电力电子与电力传动]