A self-powered solar-blind UV-enhanced Bi_(2)Se_(3)/a-Ga_(2)O_(3)/p-Si heterojunction photodetector for full spectral photoresponse and imaging  

作　　者：Yajie Han Shujie Jiao Jiangcheng Jing Lei Chen Ping Rong Shuai Ren Dongbo Wang Shiyong Gao Jinzhong Wang 

机构地区：[1]School of Materials Science and Engineering,Harbin Institute of Technology,Harbin 150001,China

出　　处：《Nano Research》2024年第4期2960-2970,共11页纳米研究（英文版）

基　　金：support from the National Key R&D Program of China(No.2019YFA0705201);the National Natural Science Foundation of China(No.62174042);the Heilongjiang Touyan Team.

摘　　要：Self-powered full-spectrum photodetectors(PDs)offer numerous advantages,such as broad application fields,high precision,efficiency,and multi-functionality,which represent a highly promising and potentially valuable class of detectors for future development.However,insensitive response to solar-blind ultraviolet(UV)and complex and expensive preparation processes greatly limit their performance and practical application.In this study,a self-powered full-spectrum Bi_(2)Se_(3)/a-Ga_(2)O_(3)/p-Si heterojunction PD with high sensitivity for solar-blind UV band prepared by a simple and low-cost two-step synthesis method is presented.Experiments results reveal that the developed PD has an excellent performance,such as high sensitivity from 200 to 850 nm,and a responsivity of 1.38 mA/W as well as a detectivity of 3.22×10^(10) Jones under 254 nm light at zero bias.Additionally,the unencapsulated device displays exceptional stability and imaging capabilities.It is expected that Bi_(2)Se_(3)/a-Ga_(2)O_(3)/p-Si heterojunction PD with a simple and low-cost synthesis method has great potential for self-powered full-spectrum photodetectors.

关 键 词：Bi_(2)Se_(3)/a-Ga_(2)O_(3)/p-Si self-powered photodetector full spectral photoresponse imaging 

分 类 号：TN215[电子电信—物理电子学]