Remote heteroepitaxy of transition metal dichalcogenides through monolayer hexagonal boron nitride  

作　　者：Jidong Huang Jingren Chen Junhua Meng Siyu Zhang Ji Jiang Jingzhen Li Libin Zeng Zhigang Yin Jinliang Wu Xingwang Zhang 

机构地区：[1]Key Lab of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [2]Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China [3]Faculty of Science,Beijing University of Technology,Beijing 100124,China

出　　处：《Nano Research》2024年第4期3224-3231,共8页纳米研究（英文版）

基　　金：supported by the National Natural Science Foundation of China(Nos.62274151 and 61874106);the Natural Science Foundation of Beijing Municipality(No.4212045);the Strategic Priority Research Program of Chinese Academy of Sciences(No.XDB43000000).

摘　　要：As a very promising epitaxy technology,the remote epitaxy has attracted extensive attention in recent years,in which graphene is the most used interlayer material.As an isomorphic of graphene,two-dimensional(2D)hexagonal boron nitride(h-BN),is another promising interlayer for the remote epitaxy.However,there is a current debate on the feasibility of using h-BN as interlayer in the remote epitaxy.Herein,we demonstrate that the potential field of sapphire can completely penetrate monolayer h-BN,and hence the remote epitaxy of ZrS_(2) layers can be realized on sapphire substrates through monolayer h-BN.The field of sapphire can only partially penetrate the bilayer h-BN and result in the mixing of remote epitaxy and van der Waals(vdWs)epitaxy.Due to the weak interfacial scattering and high crystalline quality of ZrS_(2) epilayer,the ZrS_(2) photodetector with monolayer h-BN shows the best performance,with an on/off ratio of more than 2×10^(5) and a responsivity up to 379 mA·W^(-1).This work provides an efficient approach to prepare single-crystal transition metal dichalcogenides and their heterojunctions with h-BN,which have great potential in developing large-area 2D electronic devices.

关 键 词：remote epitaxy hexagonal boron nitride transition metal dichalcogenides chemical vapor deposition PHOTODETECTORS 

分 类 号：TN215[电子电信—物理电子学]