Modulating p-type doping of two-dimensional material palladium diselenide  

作　　者：Jiali Yang Yu Liu En-Yang Wang Jinbo Pang Shirong Huang Thomas Gemming Jinshun Bi Alicja Bachmatiuk Hao Jia Shu-Xian Hu Chongyun Jiang Hong Liu Gianaurelio Cuniberti Weijia Zhou Mark H Rümmeli 

机构地区：[1]Institute for Advanced Interdisciplinary Research(iAIR),University of Jinan,Jinan 250022,China [2]Institute for Materials Chemistry,Leibniz Institute for Solid State and Materials Research Dresden(IFW Dresden),20 Helmholtz Strasse,Dresden 01069,Germany [3]State Key Lab of Transducer Technology,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China [4]College of Energy,Soochow Institute for Energy and Materials Innovations Soochow University,Suzhou 215006,China [5]Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province,Soochow University,Suzhou 215006,China [6]School of Integrated Circuits,University of Chinese Academy of Sciences,Beijing 101408,China [7]Institute of Microelectronics of Tianjin Binhai New Area,Tianjin 300451,China [8]Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China [9]Lukasiewicz Research Network,PORT Polish Center for Technology Development,Stablowicka 147,Wroclaw 54-066,Poland [10]School of Mathematics and Physics,University of Science and Technology Beijing,Beijing 100083,China [11]College of electronic information and optical engineering,Nankai University,Tianjin 300350,China [12]Centre of Polymer and Carbon Materials,Polish Academy of Sciences,M.Curie Sklodowskiej 34,Zabrze 41-819,Poland [13]Center for Energy and Environmental Technologies,VŠB-Technical University of Ostrava,17.Listopadu 15,Ostrava 70833,Czech Republic [14]State Key Laboratory of Crystal Materials,Center of Bio&Micro/Nano Functional Materials,Shandong University,Jinan 250100,China [15]Dresden Center for Computational Materials Science,Technische Universität Dresden,Dresden 01062,Germany [16]Dresden Center for Intelligent Materials(GCL DCIM),Technische Universität Dresden,Dresden 01062,Germany [17]Institute for Materials Science and Max Bergmann Center of Biomaterials,Technische Universität Dresden,Dresden 01069,Germany [18]Center for Advancing Electronics Dresden,Technische Universität Dresden

出　　处：《Nano Research》2024年第4期3232-3244,共13页纳米研究（英文版）

基　　金：the Natural Science Foundation of Shandong Province for Excellent Young Scholars(No.ZR2022YQ41);the fund(No.SKT2203)from the State Key Laboratories of Transducer Technology,Shanghai Institute of Microsystem and Information Technology;Chinese Academy of Sciences for support.This work was partially supported by the National Key Research and Development Program of China(No.2022YFE0124200);the National Natural Science Foundation of China(No.U2241221);W.J.Z.thanks the Major innovation project of Shandong Province(No.2021CXGC010603);the National Natural Science Foundation of China(No.52022037);the Taishan Scholars Project Special Funds(No.TSQN201812083);The project was supported by the Foundation(No.GZKF202107)of State Key Laboratory of Biobased Material and Green Papermaking;Qilu University of Technology,Shandong Academy of Sciences.M.H.R.thanks the National Natural Science Foundation of China(No.52071225);the National Science Center and the Czech Republic under the ERDF program“Institute of Environmental Technology-Excellent Research”(No.CZ.02.1.01/0.0/0.0/16_019/0000853);the Sino-German Research Institute(No.GZ 1400)for support;S.X.H.thanks the National Natural Science Foundation of China(Nos.21976014 and 22276013)for funding,and thanks the Tianhe2-JK HPC for generous computer time.

摘　　要：The van der Waals heterostructures have evolved as novel materials for complementing the Si-based semiconductor technologies.Group-10 noble metal dichalcogenides(e.g.,PtS_(2),PtSe_(2),PdS_(2),and PdSe_(2))have been listed into two-dimensional(2D)materials toolkit to assemble van der Waals heterostructures.Among them,PdSe_(2) demonstrates advantages of high stability in air,high mobility,and wide tunable bandgap.However,the regulation of p-type doping of PdSe_(2) remains unsolved problem prior to fabricating p–n junction as a fundamental platform of semiconductor physics.Besides,a quantitative method for the controllable doping of PdSe_(2) is yet to be reported.In this study,the doping level of PdSe_(2) was correlated with the concentration of Lewis acids,for example,SnCl_(4),used for soaking.Considering the transfer characteristics,the threshold voltage(the gate voltage corresponding to the minimum drain current)increased after SnCl_(4) soaking treatment.PdSe_(2) transistors were soaked in SnCl_(4) solutions with five different concentrations.The threshold voltages from the as-obtained transfer curves were extracted for linear fitting to the threshold voltage versus doping concentration correlation equation.This study provides in-depth insights into the controllable p-type doping of PdSe_(2).It may also push forward the research of the regulation of conductivity behaviors of 2D materials.

关 键 词：two-dimensional(2D)materials Lewis acid treatment p-type doping field-effect transistors transfer characteristic 

分 类 号：TB30[一般工业技术—材料科学与工程]