Light-emitting devices based on atomically thin MoSe_(2)  

作　　者：Xinyu Zhang Xuewen Zhang Hanwei Hu Vanessa Li Zhang Weidong Xiao Guangchao Shi Jingyuan Qiao Nan Huang Ting Yu Jingzhi Shang 

机构地区：[1]Institute of Flexible Electronics,Northwestern Polytechnical University,Xi'an 710129,China [2]School of Physics and Technology,Wuhan University,Wuhan 430072,China [3]Wuhan Institute of Quantum Technology,Wuhan 430206,China

出　　处：《Journal of Semiconductors》2024年第4期19-35,共17页半导体学报（英文版）

基　　金：This work is supported by the National Natural Science Foundation of China(No.61904151);the National Key Research and Development Program of China(No.2021YFA1200803);the Joint Research Funds of the Department of Science&Technology of Shaanxi Province and Northwestern Polytechnical University(No.2020GXLH-Z-020).

摘　　要：Atomically thin MoSe_(2) layers,as a core member of the transition metal dichalcogenides(TMDs)family,benefit from their appealing properties,including tunable band gaps,high exciton binding energies,and giant oscillator strengths,thus pro-viding an intriguing platform for optoelectronic applications of light-emitting diodes(LEDs),field-effect transistors(FETs),sin-gle-photon emitters(SPEs),and coherent light sources(CLSs).Moreover,these MoSe_(2) layers can realize strong excitonic emis-sion in the near-infrared wavelengths,which can be combined with the silicon-based integration technologies and further encourage the development of the new generation technologies of on-chip optical interconnection,quantum computing,and quantum information processing.Herein,we overview the state-of-the-art applications of light-emitting devices based on two-dimensional MoSe_(2) layers.Firstly,we introduce recent developments in excitonic emission features from atomically thin MoSe_(2) and their dependences on typical physical fields.Next,we focus on the exciton-polaritons and plasmon-exciton polaritons in MoSe_(2) coupled to the diverse forms of optical microcavities.Then,we highlight the promising applications of LEDs,SPEs,and CLSs based on MoSe_(2) and their heterostructures.Finally,we summarize the challenges and opportunities for high-quality emis-sion of MoSe_(2) and high-performance light-emitting devices.

关 键 词：MoSe_(2) light-matter interaction EXCITON POLARITON light-emitting device 

分 类 号：TN312.8[电子电信—物理电子学]