Improvement of Ga_(2)O_(3)vertical Schottky barrier diode by constructing NiO/Ga_(2)O_(3)heterojunction  

作　　者：Xueqiang Ji Jinjin Wang Song Qi Yijie Liang Shengrun Hu Haochen Zheng Sai Zhang Jianying Yue Xiaohui Qi Shan Li Zeng Liu Lei Shu Weihua Tang Peigang Li 

机构地区：[1]School of Integrated Circuits&State Key Laboratory of Information Photonics and Optical Communications,Beijing University of Posts and Telecommunications,Beijing 100876,China [2]College of Integrated Circuit Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210023,China [3]Beijing Microelectronics Technology Institute,Beijing 100076,China

出　　处：《Journal of Semiconductors》2024年第4期63-68,共6页半导体学报（英文版）

基　　金：supported by BUPT Excellent Ph.D. Students Foundation (CX2023301);in part by the National Natural Science Foundation of China (62204019)

摘　　要：The high critical electric field strength of Ga_(2)O_(3)enables higher operating voltages and reduced switching losses in power electronic devices.Suitable Schottky metals and epitaxial films are essential for further enhancing device performance.In this work,the fabrication of vertical Ga_(2)O_(3)barrier diodes with three different barrier metals was carried out on an n--Ga_(2)O_(3)homogeneous epitaxial film deposited on an n+-β-Ga_(2)O_(3)substrate by metal-organic chemical vapor deposition,excluding the use of edge terminals.The ideal factor,barrier height,specific on-resistance,and breakdown voltage characteristics of all devices were investigated at room temperature.In addition,the vertical Ga_(2)O_(3)barrier diodes achieve a higher breakdown volt-age and exhibit a reverse leakage as low as 4.82×10^(-8)A/cm^(2)by constructing a NiO/Ga_(2)O_(3)heterojunction.Therefore,Ga_(2)O_(3)power detailed investigations into Schottky barrier metal and NiO/Ga_(2)O_(3)heterojunction of Ga_(2)O_(3)homogeneous epitaxial films are of great research potential in high-efficiency,high-power,and high-reliability applications.

关 键 词：Ga_(2)O_(3) Schottky barrier diode NiO/Ga_(2)O_(3)heterojunction 

分 类 号：TN386[电子电信—物理电子学]