Ambient-condition strategy for rapid mass production of crystalline gallium oxide nanoarchitectures toward device application  

作　　者：Dongdong Zhang Hao Yu Guiqin You Gang Shao Zhi Fang Zhao Liang Tian Zhang Huilin Hou Lin Wang Qiaochu Chen Jie Teng Weiyou Yang 

机构地区：[1]College of Materials Science and Engineering,Hunan University,Changsha 410082,China [2]Institute of Micro/Nano Materials and Devices,Ningbo University of Technology,Ningbo 315211,China [3]School of Materials Science and Engineering,Zhengzhou University,Zhengzhou 450001,China

出　　处：《Journal of Materials Science & Technology》2023年第32期150-157,共8页材料科学技术（英文版）

基　　金：Top Talent Project of Ningbo Municipal Government,National Natural Science Foundation of China(No.51972178)。

摘　　要：Currently,the synthesis of nanostructures still encounters two grand challenges:one is the often-required high temperatures and/or high pressures,and the other is the scalable fabrication.Here,to break through such bottlenecks,we demonstrate an ambient-condition strategy for rapid mass production of fourthgeneration semiconductor Ga_(2)O_(3)nanoarchitectures assembled by single-crystalline nanosheets in a controlled manner based on sonochemistry.Their growth is fundamentally determined by the introduced ethanediamine in rationally designed source materials,which could not only protect the metal Ga against reacting with H_(2)O into GaOOH,but facilitate the reaction of Ga with OH·radicals for target crystalline Ga_(2)O_(3)nanostructures.As a proof of concept for applications,the as-fabricated Ga_(2)O_(3)nanoarchitectures exhibit superb performances for electromagnetic wave absorption with a reflection loss value of 52.2 dB at 8.1 GHz,and ammonia sensing with high sensitivity and selectivity at room temperature,representing their bright future to be commercially applied in modern devices.

关 键 词：Semiconductor Crystalline nanostructures Crystal growth Ambient condition Device application 

分 类 号：TB34[一般工业技术—材料科学与工程]