杂模抑制薄膜体声波谐振器的仿真分析  

Simulation Analysis of a Thin-Film Bulk Acoustic-Wave Resonator for Spurious-Mode Suppression

作　　者：罗恩雄 张必壮 吴坤 马晋毅 李思忍 LUO Enxiong;ZHANG Bizhuang;WU Kun;MA Jinyi;LI Siren(CETC Academy of Chips Technology,Chongqing 401332,China;Liuzhou Measuring Technology Testing Institute,Liuzhou 545001,China)

机构地区：[1]中国电科芯片技术研究院,重庆401332 [2]柳州市计量技术测试研究所,广西柳州545001

出　　处：《压电与声光》2024年第2期159-163,共5页Piezoelectrics & Acoustooptics

摘　　要：该文研究了电极边界阶梯结构对薄膜体声波谐振器(FBAR)杂波的影响。采用有限元仿真法讨论了阶梯结构宽度尺寸对杂波的抑制效果,结合振型分析该结构能抑制声波能量的泄露,提高器件品质因数。为了进一步验证仿真结果,实验制备了FBAR器件。测试结果表明,当该阶梯结构凸起宽度为3μm,凹陷宽度为1.5μm时,谐振器杂波被有效抑制,反谐振频率处的品质因数约增大100。In this study,the effect of the electrode-boundary step structure on the spurious mode of thin-film bulk acoustic resonators(FBARs)is investigated.The finite-element simulation method is used to investigate the effect of the width dimension of the step structure on the suppression of spurious modes.The step structure is analyzed in conjunction with the vibration pattern to suppress the leakage of acoustic energy and to improve the quality factor of the device.To further verify the simulation results,FBAR devices are experimentally prepared.The results show that when the width of the raised frame is 3μm and the width of the recessed frame is 1.5μm,the resonator spurious mode is effectively suppressed and the quality factor at the anti-resonance frequency is increased by about 100.

关 键 词：薄膜体声波谐振器(FBAR) 阶梯结构 杂模抑制 有限元 

分 类 号：TN65[电子电信—电路与系统]