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作 者:李锦 党恩帅 范雨顺 董航飞 刘进军[3] Li Jin;Dang Enshuai;Fan Yushun;Dong Hangfei;Liu Jinjun(School of Electrical Engineering Shanghai University of Electric Power,Shanghai 200090 China;Jiangsu Zhongtian Technology Co.Ltd ,Nantong 226463 China;School of Electrical Engineering Xi’an Jiaotong University,Xi’an 710049 China)
机构地区:[1]上海电力大学电气工程学院,上海200090 [2]江苏中天科技股份有限公司,南通226463 [3]西安交通大学电气工程学院,西安710049
出 处:《电工技术学报》2024年第8期2496-2510,共15页Transactions of China Electrotechnical Society
摘 要:该文提出一种碳化硅与硅(SiC&Si)器件混合型三电平有源中点钳位零电压转换(3L-ANPC ZVT)变流器拓扑。该拓扑中每相主电路采用两个SiC MOSFET器件工作在高频,其余主电路开关为Si器件工作在低频,通过辅助电路使得SiC器件工作在ZVT软开关条件下,进一步降低SiC MOSFET高频开关损耗和开关应力。拓扑中辅助电路开关采用Si器件且仅在主器件换相过程工作,具有额定电流小且无开关损耗的特点。该文首先介绍该软开关变流器的电路拓扑结构和工作原理,并给出辅助电路参数的优化设计过程。然后基于双脉冲测试数据对变流器进行损耗建模,分析对比不同开关频率下硬开关和软开关有源中点钳位三电平变流器的损耗分布和效率变化,揭示所提出的软开关变流器拓扑在高开关频率下可以有效改善变流器的效率。最后通过搭建的单相变流器实验平台验证上述分析结论的正确性。Improving power density and efficiency is a current development trend in the new energy generation system.This objective can be achieved by reducing system switching losses and increasing switching frequency.Compared with silicon(Si)devices,silicon carbide(SiC)wide bandgap semiconductor devices have the advantages of low losses and high junction temperature,which can effectively improve the efficiency and switching frequency of converters and have emerged as a prominent topic in recent academic research.However,the cost of SiC devices is still several times higher than that of Si devices.As a result,realizing an all-SiC converter in the three-level active-neutral-point-clamped(3L-ANPC)topology for cost reasons is challenging.Consequently,the industry has proposed a hybrid configuration incorporating SiC and Si devices to enhance converter efficiency and power density and control costs.In addition,the use of SiC-wide bandgap semiconductor devices can lead to severe switching overvoltage and electromagnetic interference issues.Furthermore,at higher switching frequencies,such as 100 kHz,the hard-switching losses with SiC devices can be significant,hindering further improvements in converter efficiency and power density.As a solution to these challenges,researchers have proposed the use of soft-switching technology.A hybrid 3L-ANPC zero-voltage transition(ZVT)soft-switching converter based on SiC and Si devices was proposed.Based on the two SiC MOSFET devices’hybrid 3L-ANPC converter topology,the main circuit SiC devices and the auxiliary circuit Si devices can achieve soft-switching in the full power range with an auxiliary circuit,thus improving converter efficiency while considering its economy.Firstly,the circuit topology and working mechanism of the proposed 3L-ANPC ZVT soft-switching converter were illustrated.The main circuit's modulation strategy is designed to operate the outer switches and clamping switches in the line frequency.The inner switches operate at high frequency to leverage the benefits of the
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