一种紧凑的射频CMOS放大器LC输出匹配电路  

A Compact RF CMOS Amplifier LC Output Matching Circuit

作　　者：赵晓冬 ZHAO Xiaodong(Southwest China Institute of Electronic Technology,Chengdu 610036,China)

机构地区：[1]中国西南电子技术研究所,成都610036

出　　处：《电讯技术》2024年第4期637-642,共6页Telecommunication Engineering

摘　　要：提出了一种紧凑的射频互补金属氧化物半导体(Complementary Metal Oxide Semiconductor,CMOS)放大器LC输出匹配电路,利用放大器漏极偏置电感、输出端隔直电容与放大器输出端并联电感电容形成高阶LC谐振网络,可在占用较小芯片面积的条件下实现较传统L型匹配电路更宽频率范围的输出阻抗匹配。推导了该LC输出匹配电路元件值的计算式,并根据提出的设计方法,采用65 nm CMOS工艺设计了一款K频段放大器,其输出匹配电路尺寸仅98μm×150μm。仿真结果表明,在16.5~22.1 GHz频率范围内放大器的S 22<-10 dB,阻抗匹配带宽相比L型匹配电路增加166%。放大器实测S参数和仿真结果相符,验证了该LC匹配电路可实现紧凑的宽带阻抗匹配。A compact radio frequency(RF)complementary metal oxide semiconductor(CMOS)amplifier LC output matching circuit is proposed.A high-order LC resonant network is formed by using the drain bias inductor,the output DC block capacitor,and the output parallel LC of the amplifier.It can achieve output impedance matching in a wider frequency range than traditional L-type matching circuit under the condition of occupying a small chip area.The formula for calculating the component values of the LC output matching circuit is deduced,and according to the proposed design method,a K-band amplifier is designed with a 65 nm CMOS process,and its output matching circuit size is only 98μm×150μm.The simulation results show that S 22 of the amplifier is less than-10 dB in 16.5~22.1 GHz,and the impedance matching bandwidth is increased by 166%compared with that of the L-type matching circuit.The measured S-parameters of the amplifier are consistent with the simulation ones,which verifies that the LC matching circuit can achieve compact broadband impedance matching.

关 键 词：紧凑匹配电路 射频CMOS放大器 宽带阻抗匹配 LC谐振网络 

分 类 号：TN722[电子电信—电路与系统]