基底均匀和梯度掺杂下EBCMOS电荷收集效率的优化模拟  

Simulation of Charge Collection Efficiency Optimization for EBCMOS with Uniform and Gradient Doping

作　　者：焦岗成 宋德 闫磊[1] 肖超 李野 陈卫军 Jiao Gangcheng;Song De;Yan Lei;Xiao Chao;Li Ye;Chen Weijun(Science and Technology on Low-Light-Level Night Version Laboratory,Xi'an 710065,Shaanxi,China;College of Physics,Changchun University of Science and Technology,Changchun 130022,Jilin,China)

机构地区：[1]微光夜视技术重点实验室,陕西西安710065 [2]长春理工大学物理学院,吉林长春130022

出　　处：《中国激光》2024年第2期154-161,共8页Chinese Journal of Lasers

基　　金：微光夜视技术重点实验室基金资助课题(J20210102);国家自然科学基金(U2141239)。

摘　　要：为获得高增益的电子轰击型CMOS(EBCMOS)成像器件,根据载流子输运理论,采用蒙特卡罗方法,研究了EBCMOS基底在不同掺杂方式和结构参数下的电荷收集效率。结果表明:当基底均匀掺杂时,减小掺杂浓度、降低基底厚度及缩小近贴距离可以有效提高电荷收集效率;当基底梯度掺杂时,减小重掺杂浓度区域的范围,可以有效提高电荷收集效率。仿真优化后器件的电荷收集效率最高可达到86.28%,为国产EBCMOS器件的研制提供了理论支撑。Objective As a new type of low-light night vision imaging device technology,electron-bombarded complementary metal-oxidesemiconductor(EBCMOS)technology can realize photoelectric conversion,electric signal enhancement,digital processing,and target output below an illumination of 10−4 lx.It has the advantages of a small size,light weight,high gain,low noise,and fast response.Therefore,it has wide application prospects in military equipment,astronomical observation,remote-sensing mapping,and space detection.In the EBCMOS working process,the photoelectrons generated from the photocathode by the external photoelectric effect are accelerated by the negative high voltage between the photocathode and the surface of the electron-sensitive CMOS and bombard the P-type semiconductor substrate to obtain the gain from the secondary electrons in the multiplier layer.Because of the concentration difference of the minority carriers in the P-type substrate,the secondary electrons diffuse to the pixel region,are collected by the photodiode in the active pixel circuit,and are finally read out by the MOS transistor amplification circuit.Therefore,to improve the gain characteristics of EBCMOS devices,the design and optimization of the structural parameters of EBCMOS substrates and the building of corresponding theoretical models are important issues for researchers.In this study,secondary electron charge collection in EBCMOS substrates under different doping modes and structural parameters was investigated,laying a theoretical and technical foundation for the preparation of high-gain EBCMOS electron multiplier layers.Methods According to carrier transport theory and the Monte Carlo simulation algorithm,a theoretical model of the entire electronic trajectory of an EBCMOS substrate was established.Electron charge collection in the electron multiplier layer under uniform and gradient doping of the P-type substrate was simulated,and transport calculation models of photogenerated electrons and multiplier electrons in the proximity region

关 键 词：光学器件 夜视技术 电子轰击型CMOS 电荷收集效率 梯度掺杂 

分 类 号：TN223[电子电信—物理电子学]