Wedge-shaped HfO_(2) buffer layer-induced field-free spin-orbit torque switching of HfO_(2)/Pt/Co structure  

作　　者：陈建辉 梁梦凡 宋衍 袁俊杰 张梦旸 骆泳铭 王宁宁 Jian-Hui Chen;Meng-Fan Liang;Yan Song;Jun-Jie Yuan;Meng-Yang Zhang;Yong-Ming Luo;Ning-Ning Wang(School of Electronics and Information Engineering,Hangzhou Dianzi University,Hangzhou 310018,China;Covestro lnvestment Co.,Ltd,Shanghai 200126,China)

机构地区：[1]School of Electronics and Information Engineering,Hangzhou Dianzi University,Hangzhou 310018,China [2]Covestro lnvestment Co.,Ltd,Shanghai 200126,China

出　　处：《Chinese Physics B》2024年第4期662-667,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant No.12274108);the Natural Science Foundation of Zhejiang Province,China (Grant Nos.LY23A040008 and LY23A040008);the Basic Scientific Research Project of Wenzhou,China (Grant No.G20220025)。

摘　　要：Field-free spin-orbit torque(SOT)switching of perpendicular magnetization is essential for future spintronic devices.This study demonstrates the field-free switching of perpendicular magnetization in an HfO_(2)/Pt/Co/TaO_(x) structure,which is facilitated by a wedge-shaped HfO_(2)buffer layer.The field-free switching ratio varies with HfO_(2)thickness,reaching optimal performance at 25 nm.This phenomenon is attributed to the lateral anisotropy gradient of the Co layer,which is induced by the wedge-shaped HfO_(2)buffer layer.The thickness gradient of HfO_(2)along the wedge creates a corresponding lateral anisotropy gradient in the Co layer,correlating with the switching ratio.These findings indicate that field-free SOT switching can be achieved through designing buffer layer,offering a novel approach to innovating spin-orbit device.

关 键 词：spin-orbit torque field-free switching HfO_(2) buffer layer 

分 类 号：O469[理学—凝聚态物理]