Mid-wavelength nBn photodetector with high operating temperature and low dark current based on InAs/InAsSb superlattice absorber  

作　　者：曹澎 王天财 彭红玲 李占国 Qiandong Zhuang 郑婉华 Peng Cao;Tiancai Wang;Hongling Peng;Zhanguo Li;Qiandong Zhuang;Wanhua Zheng(Laboratory of Solid-State Optoelectronics Information Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;College of Electronic and Communication Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;School of Physics,Changchun Normal University,Changchun 130022,China;Physics Department,Lancaster University,Lancaster LA14YB,UK)

机构地区：[1]Laboratory of Solid-State Optoelectronics Information Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [2]Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China [3]College of Electronic and Communication Engineering,University of Chinese Academy of Sciences,Beijing 100049,China [4]State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [5]School of Physics,Changchun Normal University,Changchun 130022,China [6]Physics Department,Lancaster University,Lancaster LA14YB,UK

出　　处：《Chinese Optics Letters》2024年第1期123-127,共5页中国光学快报（英文版）

基　　金：supported by the National Science and Technology Major Project(No.2018YFE0200900)。

摘　　要：In this paper,we demonstrate nBn InAs/InAsSb type II superlattice(T2SL)photodetectors with AlAsSb as the barrier that targets mid-wavelength infrared(MWIR)detection.To improve operating temperature and suppress dark current,a specific Sb soaking technique was employed to improve the interface abruptness of the superlattice with device passivation using a SiO_(2) layer.These result in ultralow dark current density of 6.28×10^(-6)A/cm^(2)and 0.31 A/cm^(2)under-600 mV at 97 K and297 K,respectively,which is lower than most reported InAs/InAsSb-based MWIR photodetectors.Corresponding resistance area product values of 3.20×10^(4)Ω·cm^(2)and 1.32Ω·cm^(2)were obtained at 97 K and 297 K.A peak responsivity of 0.39 A/W with a cutoff wavelength around 5.5μm and a peak detectivity of 2.1×10^(9)cm·Hz^(1/2)/W were obtained at a high operating temperature up to 237 K.

关 键 词：mid-wavelength infrared photodetector InAs/InAsSb superlattice high operating temperature dark current 

分 类 号：TN36[电子电信—物理电子学]