Current status and development of CMOS SiPM for scintillator-based radiation detectors toward all-digital sensors[Invited]  

作　　者：Nicola D'Ascenzo 胡文韬 劳慧 华越轩 张博 房磊 奚道明 郑睿 邱奥 Emanuele Antonecchia 凌怡清 刘雨晴 李琰 俞航 肖鹏 谢庆国 Nicola D’Ascenzo;Wentao Hu;Hui Lao;Yuexuan Hua;Bo Zhang;Lei Fang;Daoming Xi;Rui Zheng;Ao Qiu;Emanuele Antonecchia;Yiqing Ling;Yuqing Liu;Yan Li;Hang Yu;Peng Xiao;Qingguo Xie(Wuhan National Laboratory for Optoelectronics,Wuhan 430074,China;Biomedical Engineering Department,Huazhong University of Science and Technology,Wuhan 430074,China;RAYQUANT Technology Co.,Ltd.,Ezhou 436044,China;RAYSOLUTION Healthcare Co.,Ltd.,Hefei 230000,China;RAYMEASURE Technology Co.,Ltd.,Suzhou 215000,China;RAYCAN Technology Co.,Ltd.,Suzhou 215000,China;College of Computer Science and Software Engineering,Shenzhen University,Shenzhen 518060,China)

机构地区：[1]Wuhan National Laboratory for Optoelectronics,Wuhan 430074,China [2]Biomedical Engineering Department,Huazhong University of Science and Technology,Wuhan 430074,China [3]RAYQUANT Technology Co.,Ltd.,Ezhou 436044,China [4]RAYSOLUTION Healthcare Co.,Ltd.,Hefei 230000,China [5]RAYMEASURE Technology Co.,Ltd.,Suzhou 215000,China [6]RAYCAN Technology Co.,Ltd.,Suzhou 215000,China [7]College of Computer Science and Software Engineering,Shenzhen University,Shenzhen 518060,China

出　　处：《Chinese Optics Letters》2024年第2期17-27,共11页中国光学快报（英文版）

基　　金：supported by the National Natural Science Foundation of China(Nos.62250002,62027808,and 62027801);the Sino-German Mobility Programme(No.M-0387)。

摘　　要：Modern scintillator-based radiation detectors require silicon photomultipliers(Si PMs)with photon detection efficiency higher than 40%at 420 nm,possibly extended to the vacuum ultraviolet(VUV)region,single-photon time resolution(SPTR)<100 ps,and dark count rate(DCR)<150 kcps/mm^(2).To enable single-photon time stamping,digital electronics and sensitive microcells need to be integrated in the same CMOS substrate,with a readout frame rate higher than 5 MHz for arrays extending over a total area up to 4 mm×4 mm.This is challenging due to the increasing doping concentrations at low CMOS scales,deep-level carrier generation in shallow trench isolation fabrication,and power consumption,among others.The advances at 350 and 110 nm CMOS nodes are benchmarked against available Si PMs obtained in CMOS and commercial customized technologies.The concept of digital multithreshold Si PMs with a single microcell readout is finally reported,proposing a possible direction toward fully digital scintillator-based radiation detectors.

关 键 词：silicon photomultiplier complementary metal-oxide semiconductor digital SiPM 

分 类 号：TN152[电子电信—物理电子学] TP212[自动化与计算机技术—检测技术与自动化装置]