Tm_(2)O_(3)掺杂K_(0.5)Na_(0.5)Nb_(0.7)Ta_(0.3)O_(3)陶瓷的烧结工艺与介电性能研究  

Sintering Process and Dielectric Properties of Tm_(2)O_(3)Doped K_(0.5)Na_(0.5)Nb_(0.7)Ta_(0.3)O_(3)Ceramics

作　　者：周媛[1] 蔡艳芝[1] 王丹 叶子妍 党于茜 潘天成 刘昌宝 石义兴 Zhou Yuan;Cai Yanzhi;Wang Dan;Ye Ziyan;Dang Yuqian;Pan Tiancheng;Liu Changbao;Shi Yixing(College of Materials&Mineral Resources,Xi'an University of Architecture and Technolo-gy,Xian 710055,China)

机构地区：[1]西安建筑科技大学材料科学与工程学院,陕西西安710055

出　　处：《中国稀土学报》2024年第2期254-260,I0003,共8页Journal of the Chinese Society of Rare Earths

基　　金：国家自然科学基金项目(51972261);钢铁工业环境保护国家重点实验室开放基金课题项目(YZC2017Ky02);大学生创新创业训练计划项目(S20220701032)资助。

摘　　要：溶剂热法制备的0.3%Tm_(2)O_(3)掺杂K_(0.5)Na_(0.5)Nb_(0.7)Ta_(0.3)O_(3)陶瓷粉体经常压烧结工艺烧结成陶瓷。系统研究了烧结时间和温度对陶瓷相结构、致密度、显微结构以及介电性能的影响。结果表明:烧结温度和保温时间对陶瓷的室温晶体结构几乎没有影响,所有的陶瓷样品均为单一的钙钛矿结构,但对其表面形貌、密度以及介电性能的影响较大。烧结温度为1180℃,在1~2h范围内,随着保温时间的延长,陶瓷密度不断增大,介电常数增加;烧结时间为2h,在1180~1200℃范围内,随着烧结温度的不断增加,陶瓷的致密度和介电性能先增加后降低,1185℃保温2 h时,陶瓷获得良好的介电性能:ε_(r100kHz)=1900,tanδ_(100kHz)=0.022,T_(c)=182℃。The 99.7%K_(0.5)Na_(0.5)Nb_(0.7)Ta_(0.3)O_(3)·0.3%Tm_(2)O_(3)ceramic powders prepared by solvothermal method was sin-tered into ceramics by pressure sintering process.The effects of holding time and sintering temperature on phase structure,microstructure,density and dielectric properties were systematically investigated.The results show that sintering temperature and holding time have litle effect on the room temperature crystal structure of ceramic and all the specimens exhibit a pure perovskite structure which strongly affects the surface morphology,density and dielectric properties.When sintered at 1180 C for 1-2 h,the density and dielectric constant increase with the extension of holding time;when sintered at 1180-1200 C for 2 h,with the increase of sintering tempera-ture,the density and dielectric properties of ceramics first increase and then decrease.The O0.3%Tm,O,doped 99.7%K_(0.5)Na_(0.5)Nb_(0.7)Ta_(0.3)O_(3)ceramic sintered at 1185℃for 2 h exhibits excellent properties:ε_(r100kHz)=1900,tanδ_(100kHz)=0.022,T_(c)=182℃.

关 键 词：稀土掺杂 铌酸钾钠 介电性能 

分 类 号：TB34[一般工业技术—材料科学与工程]