高功率1060 nm垂直腔面发射激光器  

High-Power 1060 nm Vertical Cavity Surface Emitting Laser

作　　者：郑妹茵 渠红伟 周旭彦[2,3] 董风鑫 张建心 隋佳桐 孟凡胜[3] 谢中华 王海玲 王宇飞 齐爱谊 Zheng Meiyin;Qu Hongwei;Zhou Xuyan;Dong Fengxin;Zhang Jianxin;Sui Jiatong;Meng Fansheng;Xie Zhonghua;Wang Hailing;Wang Yufei;Qi Aiyi(School of Physics and Physical Engineering,Qufu Normal University,Qufu 273165,Shandong,China;Weifang Academy of Advanced Opto-Electronic Circuits,Weifang 261000,Shandong,China;Laboratory of Solid State Optoelectronics Information Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;School of Physics and Electronic Information,Weifang University,Weifang 261061,Shandong,China)

机构地区：[1]曲阜师范大学物理工程学院,山东曲阜273165 [2]潍坊先进光电芯片研究院,山东潍坊261000 [3]中国科学院半导体研究所固态光电信息技术重点实验室,北京100083 [4]潍坊学院物理与电子信息学院,山东潍坊261061

出　　处：《光学学报》2024年第2期229-235,共7页Acta Optica Sinica

基　　金：山东省重点研发计划(2023ZLYS03,2022CXGC020104);广东省重点研发计划(2020B090922003)。

摘　　要：为了提高1060 nm垂直腔面发射激光器(VCSEL)的性能,本文对大功率1060 nm VCSEL进行了理论模拟和实验研究。计算得到红移速度为0.40 nm/K,据此确定增益和腔模失配量为-20 nm。对比分析了6种不同InGaAs组分和厚度的量子阱,以及3种不同势垒材料的增益特性和输出特性,模拟结果表明,应变补偿的InGaAs/GaAsP量子阱有源区在温度稳定性、阈值电流以及功率方面更有优势。对P型分布式布拉格反射镜(DBR)进行优化设计,优化DBR渐变层厚度和对数,有助于获得更好的输出特性。采用金属有机化学气相沉积生长了InGaAs/GaAsP应变补偿量子阱结构的VCSEL外延片,并制备了单管和阵列VCSEL,实验数据和理论分析基本吻合。实验测得,288单元VCSEL阵列在4.5 A电流下,连续输出功率为2.62 W,最高电光转换效率为36.8%,5 mm×5 mm VCSEL阵列准连续条件下(脉宽为100μs,占空比为1%),且在100 A电流下,获得峰值功率为53.4 W。Objective Vertical cavity surface emitting laser(VCSEL)has advantages such as low threshold,single longitudinal mode,circular symmetric spot,high efficiency,high modulation rate,small size,easy two-dimensional integration,and low cost.Therefore,it is widely used in optical communication,infrared lighting,and medical fields.The research on 1060 nm VCSEL in China and abroad mainly focuses on the field of low-power and low-loss optical communication,while there are few reports on high-power 1060 nm VCSEL.The 1060 nm VCSEL is mainly composed of the active region and top and down distributed Bragg reflectors(DBRs).Due to the high composition of InGaAs quantum wells,excessive strain can easily lead to poor material growth quality in the active region.Thus,strain-compensated quantum well active region and the DBR structural parameters will affect the output power and efficiency of the VCSEL.It is necessary to optimize the design of the strain-compensated quantum well active region and DBR structure to improve the performance of the 1060 nm VCSEL.We optimize the overall structure of the 1060 nm VCSEL epitaxial structure.In addition,we compare quantum wells of six different InGaAs components and thicknesses and analyze the gain and output characteristics of three barrier materials in the quantum well active region.We optimize the DBR for different gradient layer thicknesses and pairs.VCSEL single and array characteristics are fabricated and tested experimentally.Methods The red-shift velocity of the 1060 nm VCSEL is calculated to be 0.40 nm/K by PICS3D simulation software to determine the appropriate gain and cavity mode mismatch of−20 nm.By comparing and analyzing the gain spectra and peak gain of six different InGaAs components and thicknesses with temperature changes,as well as the output power,it is simulated that the In_(0.28)Ga_(0.72)As quantum well with a thickness of 8 nm has better gain and output characteristics at high temperatures.Serious carrier leakage from too-thin quantum wells and low peak gain for too-

关 键 词：垂直腔面发射激光器 高功率 应变补偿 分布式布拉格反射镜 效率 

分 类 号：TN248.4[电子电信—物理电子学]