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作 者:Jialu Yang Jiaheng Hu Yinghua Ye Jianbing Xu Yan Hu Ruiqi Shen
机构地区:[1]School of Chemistry and Chemical Engineering,Nanjing University of Science and Technology,Nanjing 210094,China [2]Micro-Nano Energetic Devices Key Laboratory of MIIT,Nanjing 210094,China [3]Institute of Space Propulsion,Nanjing University of Science and Technology,Nanjing 210094,China
出 处:《Defence Technology(防务技术)》2024年第4期57-68,共12页Defence Technology
基 金:the National Natural Science Foundation of China(Grant Nos.22275092,52372084);the Fundamental Research Funds for the Central Universities(Grant No.30923010920)。
摘 要:Self-destructing chips have promising applications for securing data.This paper proposes a new concept of energetic diodes for the first time,which can be used for self-destructive chips.A simple two-step electrochemical deposition method is used to prepare ZnO/CuO/Al energetic diode,in which N-type ZnO and P-type CuO are constricted to a PN junction.This paper comprehensively discusses the material properties,morphology,semiconductor characteristics,and exploding performances of the energetic diode.Experimental results show that the energetic diode has typical rectification with a turn-on voltage of about 1.78 V and a reverse leakage current of about 3×10^(-4)A.When a constant voltage of 70 V loads to the energetic diode in the forward direction for about 0.14 s or 55 V loads in the reverse direction for about 0.17 s,the loaded power can excite the energetic diode exploding and the current rises to about100 A.Due to the unique performance of the energetic diode,it has a double function of rectification and explosion.The energetic diode can be used as a logic element in the normal chip to complete the regular operation,and it can release energy to destroy the chip accurately.
关 键 词:Energetic diode ZnO—CuO—Al thermite ZnO/CuO PN junction Electrical explosion performance Self-destructing chips
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