Ge/SiGe非对称耦合量子阱强度调制特性仿真  

Simulation for intensity modulation of asymmetric Ge/SiGe coupled quantum wells

作　　者：江佩璘 张意 黄强 石浩天 黄楚坤 余林峰 孙军强 余长亮 JIANG Peilin;ZHANG Yi;HUANG Qiang;SHI Haotian;HUANG Chukun;YU Linfeng;SUN Junqiang;YU Changliang(Wuhan National Laboratory for Optoelectronics,Huazhong University of Science and Technology,Wuhan 430074,China;Wuhan Fisilink Microelectronics Technology Co.,Ltd.,Wuhan 430074,China)

机构地区：[1]华中科技大学武汉光电国家研究中心,湖北武汉430074 [2]武汉飞思灵微电子技术有限公司,湖北武汉430074

出　　处：《量子电子学报》2024年第2期388-396,共9页Chinese Journal of Quantum Electronics

基　　金：湖北省重点研发计划(2021BAA002)。

摘　　要：硅基光子学已被广泛认为是能实现片上光电子集成的有效平台,然而迄今为止,对硅基光源、探测器以及调制器等硅基有源器件的研究仍然具有一定的挑战性。为此,提出并仿真分析了一种可以用于实现硅基强度调制的Ge/SiGe非对称耦合量子阱结构。首先,利用8带k·p理论模型对耦合量子阱的能带结构和电子波函数进行了仿真计算;然后,详细分析了外加电场强度在0 kV/cm至60 kV/cm范围内,非对称耦合量子阱对TE和TM偏振模式的传输光的光吸收谱随外加电场强度的变化。仿真结果表明,对于TE偏振模式的传输光,在无外加电场强度条件下,非对称耦合量子阱的第一个吸收带边约在1449 nm处;而在30 kV/cm外加电场下,该量子阱的吸收带边相比于无外加电场情况向长波方向移动约22 nm,比相同外加电压下的普通量子阱显著。本工作所提出的Ge/SiGe非对称耦合量子阱结构是一种有望实现更低工作电压、更高速和更低损耗硅基强度调制器的结构。Silicon photonics has been considered as the most promising platform for on-chip optoelectronic integration.However,it is still a great challenge presently for the study of silicon-based active devices such as silicon-based light source,detectors and modulators.Therefore,an asymmetric Ge/SiGe coupled quantum wells which can be used to realize intensity modulation is proposed and simulated.Firstly,the band structure and wave functions of the asymmetric Ge/SiGe coupled quantum wells is calculated using the 8 band k·p theory model.And then,the absorption spectrums of the asymmetric coupled quantum wells for both TE and TM polarization transmission light are simulated in detail under the electric fields from 0 kV/cm to 60 kV/cm.The simulation results show that for TE polarization,the first absorption edge of the asymmetric coupled quantum wells is about 1449 nm without external electric field.While under the applied electric field of 30 kV/cm,the first absorption edge of the asymmetric coupled quantum wells shifts about 22 nm towards long wavelength direction,which is more remarkable than that of traditional uncoupled quantum wells under the same electric field.Therefore,the proposed asymmetric Ge/SiGe coupled quantum wells is a promising structure for silicon-based intensity modulators to achieve lower operating voltage,higher speed and lower power consumption.

关 键 词：光电子学 强度调制 量子限制斯塔克效应 Ge/SiGe量子阱 非对称耦合量子阱 

分 类 号：TN256[电子电信—物理电子学]