GaN HEMT栅偏置电压与反向传导电压的解耦合研究  

Decoupling of gate bias and reverse conduction of GaN HEMT

作　　者：周峰 荣玉 郑有炓[1] 陆海[1] ZHOU Feng;RONG Yu;ZHENG Youdou;LU Hai(School of Electronic Science and Engineering,Nanjing University,Nanjing210023,China)

机构地区：[1]南京大学电子科学与工程学院,江苏南京210023

出　　处：《电子元件与材料》2024年第3期264-269,共6页Electronic Components And Materials

基　　金：国家自然科学基金(62304102);国家重点研发计划(2022YFB3604300)。

摘　　要：第三代宽禁带氮化镓高电子迁移率晶体管(GaN HEMT)的反向传导特性由于受到栅极偏置的控制作用,限制了器件在双向DC/DC变换器等场景中的实用化发展。通过采用源极控制p-GaN区域的结构设计,使得部分异质结导电沟道受到源极控制,实现了反向传导电压与栅极偏置电压的解耦合,有效解决了负栅偏压下器件的反向传导特性退化难题。研究表明,当器件p-GaN层上方的源控金属块和栅极金属块长度比值为1∶1时,有利于实现正向与反向传导性能的最佳折中。在150℃高温下,采用新结构设计的GaN HEMT维持了低开启反向传导能力。双脉冲动态开关测试表明,器件具有快速开关能力。器件制备工艺简单,兼容现有的GaN HEMT工艺流程,有望促进GaN功率半导体器件技术在变换器应用领域的实用化发展。The reverse conduction capability of wide bandgap Gallium Nitride High Electron Mobility Transistors(GaN HEMTs)are governed by the gate bias,which limits the practical development of the devices in scenarios such as bidirectional DC/DC converters.With the source-control p-GaN region structure,part of the heterojunction conductive channels were dominated by the source,the decoupling of the reverse conduction voltage and the gate bias voltage was realized,and the degradation of the reverse conduction capability of the device under negative gate bias was effectively suppressed.The results show that when the ratio of the metal width above the p-GaN layer is 1∶1,it is beneficial to realize the best trade-off between forward and reverse conduction performance.At temperature of 150℃,the GaN HEMT with the new structural design sustains good reverse conduction capabilities.Double-pulse dynamic switching tests show that the device has fast switching capabilities.The device process is simple and compatible with the existing GaN HEMT process flow,and is expected to promote the practical development of GaN device technology in the converter applications.

关 键 词：GaN HEMT 反向传导能力 栅偏置电压 双脉冲开关 双向变换器 

分 类 号：TN403[电子电信—微电子学与固体电子学]