退火处理对低阻LCD屏ITO薄膜光电性能的影响  

Effect of Annealing Treatment on Photoelectric Performance of ITO Film for Low-resistance LCD Screen

作　　者：武洋 贾文友[1] 刘莉[2] 郑建军 徐娇 WU Yang;JIA Wenyou;LIU Li;ZHENG Jianjun;XU Jiao(School of Mechanical Engineering,Anhui Polytechnic University,Wuhu Anhui 241000,China;Industrial Innovation Technology Research Co.,Ltd.,Anhui Polytechnic University,Wuhu Anhui 241000,China;Wuhu Changxin Technology Co.,Ltd.,Wuhu Anhui 241000,China)

机构地区：[1]安徽工程大学机械工程学院,安徽芜湖241000 [2]安徽工程大学产业创新技术研究有限公司,安徽芜湖241000 [3]芜湖长信科技股份有限公司,安徽芜湖241000

出　　处：《盐城工学院学报（自然科学版）》2024年第1期75-78,共4页Journal of Yancheng Institute of Technology:Natural Science Edition

基　　金：安徽省高校省级科学研究项目(KJ2018A0102)。

摘　　要：采用磁控溅射法制备氧化铟锡(ITO)薄膜,对制备好的ITO薄膜样品进行不同温度、不同时间的退火处理。用WGT-S透过率雾度仪、四探针测试仪测量退火后的电阻屏ITO薄膜光电性能参数,并采用扫描电子显微镜观测退火前后薄膜的表面状态,分析退火处理对电阻屏ITO薄膜光电性能的影响。研究结果表明:制备的ITO薄膜的最佳退火温度为400℃,退火时间约为70 min。ITO thin film was prepared by magnetron sputtering method.The prepared ITO film samples were annealed at different temperatures and time.The photoelectric properties of ITO film on resistance screen after annealing were measured by WGT-S transmittance haze meter and four-probe tester,and the surface state of ITO film before and after annealing was observed by scanning electron microscope,and the influence of annealing on the photoelectric properties of ITO film on resistance screen was analyzed.The research results indicate that the optimal annealing temperature for the prepared ITO film is 400℃,and the annealing time is about 70 minutes.

关 键 词：ITO薄膜 退火温度 退火时间 光电性能 

分 类 号：O484.4[理学—固体物理]