激光诱导击穿光谱技术在半导体材料检测方面的应用进展  

Application progress of laser-induced breakdown spectroscopy in semiconductor material detection

作　　者：武传奇 修俊山 WU Chuanqi;XIU Junshan(School of Physics and Optoelectronic Engineering,Shandong University of Technology,Zibo Shandong 255049,China)

机构地区：[1]山东理工大学物理与光电工程学院,山东淄博255049

出　　处：《激光杂志》2024年第3期24-29,共6页Laser Journal

基　　金：山东省自然科学基金资助项目(No.ZR2022MA044)。

摘　　要：对于半导体材料的研究来说,其在材料内部的元素组成以及含量是影响其性能的一个重要因素,常规的检测方法虽然能够检测出样品中成分以及含量信息,但是在这过程中存在成本高、效率低、耗时长、过程较为繁琐等问题。在分析技术领域不断发展的今天,急需寻找一种便携、新颖、与当今材料相匹配的检测技术。正是基于以上需求,激光诱导击穿光谱(LIBS)技术逐步走进了大众的视野,对LIBS技术进行了简要介绍,在此基础上着重介绍了利用LIBS技术来分析半导体材料表面的微分析研究与半导体材料金属氧化物纳米薄膜方面的研究进展,介绍了LIBS技术在这两方面检测的优势以及未来LIBS技术在这些方面的发展。For the study of semiconductor materials,the element composition and content inside the material is an important factor affecting its performance,although the conventional detection method can detect the composition and content information in the sample,but in this process there are high cost,low efficiency,long time,cumbersome process and other problems.In today's evolving field of analytical technology,there is an urgent need to find a sensing technology that is portable,novel and compatible with today's materials.Based on the above needs,laser-induced breakdown spectroscopy(LIBS)technology has gradually entered the public's field of vision,the author briefly introduced LIBS technology,on this basis,he focused on the use of LIBS technology to analyze the surface of semiconductor materials microanalysis research and semiconductor material metal oxide nanofilm research progress,introduced the advantages of LIBS technology in these two aspects of detection and the future development of LIBS technology in these aspects.

关 键 词：激光诱导击穿光谱 半导体材料表面微分析 金属氧化物纳米薄膜 定性定量分析 

分 类 号：O43[机械工程—光学工程]