Cr_(2)O_(3)对ZnO-Bi_(2)O_(3)基高压压敏陶瓷性能的影响  

Effect of Cr_(2)O_(3) on properties of ZnO-Bi_(2)O_(3) based high-voltage varistor ceramics

作　　者：桂阳海 涂远生 田宽 郭会师 黄海 张心华 GUI Yanghai;TU Yuansheng;TIAN Kuan;GUO Huishi;HUANG Hai;ZHANG Xinhua(College of Materials and Chemical Engineering,Zhengzhou University of Light Industry,Zhengzhou 450000,China;Nanyang Jinniu Electric Co.,Ltd.,Nanyang 473000,Henan,China;Henan Heng’an Power Co.,Ltd.,Zhengzhou 450001,China)

机构地区：[1]郑州轻工业大学材料与化学工程学院,郑州450000 [2]南阳金牛电气有限公司,河南南阳473000 [3]河南恒安电力股份有限公司,郑州450001

出　　处：《材料工程》2024年第4期54-60,共7页Journal of Materials Engineering

基　　金：国家自然科学基金项目(U1904213,U20041102);河南省2023年科技发展计划(232102230128)。

摘　　要：采用固相烧结法制备ZnO-Bi_(2)O_(3)-Co_(2)O_(3)-NiO-Mn_(3)O_(4)-SiO_(2)-Cr_(2)O_(3)压敏陶瓷,研究不同掺杂量的Cr_(2)O_(3)对ZnO压敏陶瓷的微观结构和电气性能的影响。通过X射线衍射仪(XRD)、场发射扫描电子显微镜(FESEM)及电化学工作站分别对样品的物相、微观形貌及电性能进行表征。结果表明:Cr_(2)O_(3)的加入不仅具有抑制ZnO晶粒异常生长和提升晶粒均匀分布的作用,而且能显著降低ZnO晶粒电阻,增加晶界电阻。在Cr_(2)O_(3)添加量为0%~0.21%(摩尔分数,下同)范围内,随着添加量的增大,压敏陶瓷的非线性系数表现为先增加后减小。当Cr_(2)O_(3)掺杂量为0.14%时,ZnO压敏陶瓷具有优异的电气性能:电位梯度E_(1 mA)=216 V·mm^(-1)、泄漏电流J_L=0.36μA·cm^(-2)、非线性系数α=25、残压比K=1.815、老化系数K_(ct)=0.647。此外,该压敏陶瓷在4/10μs波形下100 kA脉冲电流冲击2次后U_(1 mA)仍保持为初始的96.75%,表现出良好的冲击稳定性,在配电系统避雷器中具有巨大的应用潜力。ZnO-Bi_(2)O_(3)-Co_(2)O_(3)-NiO-Mn_(3)O_(4)-SiO_(2)-Cr_(2)O_(3) varistor ceramics were prepared by solid-phase sintering method.The effects of different doping amounts of Cr_(2)O_(3) on the microstructure and electrical properties of ZnO varistor ceramics were investigated,and the phases,microstructures and electrical properties of samples were characterized.The results indicate that the addition of Cr_(2)O_(3) effectively inhibits the abnormal growth of ZnO grains,enhances the uniformity of grain distribution,reduces the ZnO grain resistance and increases the grain boundary resistance.In the range of 0%-0.21%(molar fraction,the same below)of Cr_(2)O_(3) addition,the nonlinear coefficient of the varistor ceramics increases first and then decreases as the addition amount increases.When the Cr_(2)O_(3) doping amount is 0.14%,the ZnO varistor ceramics exhibit excellent electrical properties,with a potential gradient E1 mA=216 V·mm^(-1),leakage current JL=0.36μA·cm^(-2),nonlinear coefficientα=25,residual voltage ratio K=1.815,and aging coefficient Kct=0.647.In addition,the initial U1 mA value of varistor ceramics still maintains 96.75%after impacted by 100 kA pulse current twice with 4/10μs waveform.The Cr_(2)O_(3) doped ZnO varistor ceramics demonstrate excellent impulse stability and significant application potential for lightning arresters of power distribution systems.

关 键 词：ZNO压敏陶瓷 Cr_(2)O_(3)掺杂 微观结构 电气性能 阻抗性能 

分 类 号：TM862[电气工程—高电压与绝缘技术]