EuBa_(2)Cu_(3)O_(7-δ)超导带材中掺杂相对He^(+)离子辐照缺陷演化及超导电性的影响  

Effect of doping on evolution of He^(+)ion irradiation defects and superconductivity in EuBa_(2)Cu_(3)O_(7-δ) superconducting strips

作　　者：赵珀 王建强 陈梅清 杨金学 苏钲雄 卢晨阳 刘华军 洪智勇 高瑞 Zhao Po;Wang Jian-Qiang;Chen Mei-Qing;Yang Jin-Xue;Su Zheng-Xiong;Lu Chen-Yang;Liu Hua-Jun;Hong Zhi-Yong;Gao Rui(School of Nuclear Science and Technology,Xi’an Jiaotong University,Xi’an 710049,China;Institute of Plasma Physics,Chinese Academy of Sciences,Hefei 230031,China;Hefei International Applied Superconductivity Center,Hefei 230071,China;Shanghai Superconductor Technology Co.,Ltd.,Shanghai 201203,China)

机构地区：[1]西安交通大学核科学与技术学院,西安710049 [2]中国科学院等离子体物理研究所,合肥230031 [3]合肥国际应用超导中心,合肥230071 [4]上海超导科技股份有限公司,上海201203

出　　处：《物理学报》2024年第8期305-316,共12页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:12005256);工业和信息化部重点项目(批准号:TC230H0AC/159)资助的课题.

摘　　要：为探究稀土钡铜氧化物(REBCO)第二代高温超导带材中掺杂相对离子辐照缺陷演化及超导电性的影响机理,本文采用能量为1.4 MeV的He^(+)离子对国产化未掺杂和掺杂摩尔分数3.5%BaHfO_(3)(BHO)的EuBa_(2)Cu_(3)O_(7-δ)带材进行三种不同剂量的室温辐照实验并退火.电学性能测试表明,随着辐照剂量的增加,掺杂带材的临界电流密度仍均高于未掺杂带材并且下降程度更小.透射电镜表征结果证明,超导层中通过掺杂BHO纳米相引入局域应变改变了辐照He缺陷的迁移行为,在一定范围内修复了损伤的超导结构,提高了带材载流能力的辐照耐受性.同时BHO纳米柱作为强钉扎中心使得掺杂带材临界电流密度的磁场依赖性和温度依赖性受辐照影响更小.不同于中子或重离子辐照后,通过退火可以恢复材料一定程度的超导电性,本文中大剂量He^(+)离子辐照的两种带材经氧气氛退火后,其电学性能继续恶化.相比于未掺杂带材,掺杂带材中BHO产生的局域应变在高温下抑制了辐照He缺陷在三维方向上的尺寸增长,改变了磁通钉扎特性,延缓了因氦泡长大而造成的超导层结构无序和非晶化.本研究为评估REBCO超导带材在辐照环境下的工况服役行为提供了参考依据.Rare-earth barium copper oxide(REBCO)as a representative of the second-generation high-temperature superconducting materials possesses superior physical advantages such as high critical magnetic field,elevated critical temperature,and superior current density,which has been applied to many domains.Although the introduction of non-superconducting nanoscale particle dopants,as a critical method,can enhance the magnetic flux pinning capability of REBCO strips,the effect of the doping on the performance change and microstructure evolution of the strips under irradiation is ignored.In this work,undoped and 3.5% BaHfO_(3)(BHO)doped EuBa_(2)Cu_(3)O_(7-δ) strips are investigated in the room-temperature irradiation experiments(1.4 MeV He^(+)ions)with three distinct doses of 5×10^(14),5×10^(15),and 5×10^(16) ions/cm^(2),respectively.Electrical performance tests reveal that the undoped strips exhibit a slight increase in Jc after the low-dose irradiation.However,with dose increasing,Jc decreases by over 60%.In contrast,doped strips experience a significantly smaller decline in Jc,ranging only between 30% and 40% at high-dose irradiation.Raman spectroscopy and transmission electron microscopy characterizations confirm that the defects induced by He+ion irradiation lead to amorphization and structural disorder within the superconducting layers,which is the primary reason for the decline in the superconducting properties of the strips.The results show that the introduction of localized strain through BHO nanophase in the superconducting layer changes the migration and aggregation behavior of irradiation-induced defects,repairing the damaged superconductor structure.Furthermore,the field dependence and temperature dependence of Jc of doped strips are irradiation-resistant due to BHO nanocrystals as strong pinning centers.Additionally,unlike the superconducting properties of the REBCO strips that can be repaired through oxygen annealing after neutron or heavy ion irradiation,the electrical properties of the two types of stri

关 键 词：REBCO超导带材 辐照损伤 临界电流密度 微观结构表征 

分 类 号：O511.3[一般工业技术—材料科学与工程]