面向柔性直流变流器应用的低损耗4500 V/5000 A IGBT模块  

Low Loss 4500 V 5000 A IGBT Modules Targeting VSC-HVDC and FACTs Application

作　　者：高东岳 叶枫叶 张大华 钱培华 GAO Dongyue;YE Fengye;ZHANG Dahua;QIAN Peihua(NARI Group(State Grid Electrical Science Institute)Co.,Ltd.,Nanjing,211100,CHN;Nanjing NARI Semiconductor Co.,Ltd.,Nanjing,211100,CHN)

机构地区：[1]南瑞集团(国网电力科学研究院)有限公司,南京211100 [2]南京南瑞半导体有限公司,南京211100

出　　处：《固体电子学研究与进展》2024年第2期113-118,共6页Research & Progress of SSE

基　　金：国家电网有限公司总部科技项目资助(5108-202218280A-2-110-XG)。

摘　　要：为适应柔性直流变流器传输容量不断提高的应用需求,电网用大功率低损耗的IGBT模块成为发展趋势。本文介绍了一种4 500 V/5 000 A IGBT模块,通过自对准N型增强层的大面积IGBT元胞设计,提高了多芯片并联的压接模块的静动态性能,采用P和N场限制环加多级场板的终端结构保证了模块高耐压和低漏电,优化芯片工艺适配压接封装需求。封装的4 500 V/5 000 A IGBT压接模块常温下的饱和压降(V_(CEsat))为2.4 V;高温125℃下,V_(CEsat)为3.12 V,集电极和发射极间的漏电流只有18.78 mA。当频率为100~150 Hz时,静动态总损耗比竞争产品低2%左右,并且模块通过了125℃下的短路安全工作区测试、反向偏置关断安全工作区测试和反向偏置测试。To meet the increasing capacity requirement in voltage-source converter high voltage direct current and flexible alternating current transmission systems(VSC-HVDC and FACTs),IG-BT modules with high power and low loss for power gird application have become the development trend.In this paper,a kind of 4500 V/5000A IGBT module is introduced.The static and dynamic performance of multi-chip paralleled StakPak modules is improved through a big area of cell structures with self-aligned N-type enhanced layers.The terminal structure with the P and N type field limited guard rings plus multi-stage field plates ensures high blocking voltage and low leakage current,and the chip process is optimized to meet the requirement of StakPak packaging.The collector-emitter satura-tion voltage(VCEsat)of packaged 4500/V 5000 A StakPack modules is about 2.4 V at room temper-ature and 3.12 V at 125℃high temperature.The collector-emitter leakage current is only about 18.78 mA at 125℃high temperature.The total static and dynamic loss is 2%lower than that of the main competitor when the running frequency is between 100 Hz and 150 Hz.In addition,the modules have passed the tests of the short circuit safe operation area,the reverse bias safe operation area and the high temperature reverse bias.

关 键 词：自对准的N型增强层 大面积元胞 IGBT压接模块 短路安全工作区 反向偏置安全工作区 

分 类 号：TN322.8[电子电信—物理电子学]