基于改进开关可调电容的宽调谐太赫兹频率源设计  

Design of Wide Tuned Terahertz Frequency Source Based on Improved Switched Tunable Capacitor

作　　者：徐雷钧[1] 芦哲涵 白雪[1] 陈建锋[1] XU Leijun;LU Zhehan;BAI Xue;CHEN Jianfeng(School of Electrical and Information Engineering,Jiangsu University,Zhenjiang,Jiangsu,212013,CHN)

机构地区：[1]江苏大学电气信息工程学院,江苏镇江212013

出　　处：《固体电子学研究与进展》2024年第2期119-124,共6页Research & Progress of SSE

摘　　要：针对太赫兹频率源调谐范围窄的问题,基于普通PMOS可变电容设计了一种改进的开关可调电容,实现了电容变化的单调性,并基于该电容结合衬底调谐方式设计了一种宽调谐范围、高输出功率的压控振荡器(Voltage-controlled oscillator, VCO)。将设计的VCO结合二倍频器实现了一种工作在太赫兹频段的,具有较宽调谐范围及较高输出功率的太赫兹频率源。使用40 nm CMOS工艺设计的太赫兹频率源输出频率为146.3~168.5 GHz,调谐范围14.1%,并同时具有最高1.3 dBm的输出功率,其在10 MHz频偏处的相位噪声最优为-105.52 dBc/Hz。A switch‐tunable capacitor based on an ordinary PMOS variable capacitor is proposed in this paper to address the issue of narrow tuning range in terahertz frequency sources.The design achieves monotonicity in capacitance change.Additionally,a wide tuning range and high output power voltage‐controlled oscillator(VCO)based on the capacitance‐substrate tuning method is developed.By combining the designed VCO with a frequency doubler,a terahertz frequency source with wide tun‐ing range and high output power is realized.A 40 nm CMOS process is utilized to implement the de‐signed terahertz frequency source,which exhibiting an output frequency ranging from 146.3 GHz to 168.5 GHz,providing a tuning range of 14.1%.Moreover,it achieves an impressive output power of up to 1.3 dBm while maintaining optimal phase noise performance at-105.52 dBc/Hz for a frequency offset of 10 MHz.

关 键 词：太赫兹 压控振荡器 倍频器 开关电容 衬底调谐 

分 类 号：TN322.8[电子电信—物理电子学] TN431.2