Cr^(3+)掺杂的宽带近红外荧光粉研究进展  

Progress on Cr^(3+)-Doped Broadband Near-Infrared Phosphors

作　　者：卢紫微 刘永福[1] 罗朝华[1] 孙鹏[1] 蒋俊[1] LU Zi-Wei;LIU Yong-Fu;LUO Zhao-Hua;SUN Peng;JIANG Jun(Ningbo Institute of Materials Technology&Engineering,Chinese Academy of Sciences,Ningbo 315201,China;School of Materials Science and Chemical Engineering,Ningbo University,Ningbo 315211,China)

机构地区：[1]中国科学院宁波材料技术与工程研究所,宁波315201 [2]宁波大学材料科学与化学工程学院,宁波315211

出　　处：《应用化学》2024年第3期328-339,共12页Chinese Journal of Applied Chemistry

基　　金：国家自然科学基金(No.12074393);浙江省自然科学基金项目(No.LZ23A040001);中国科学院青年创新促进会项目(No.2021295)资助。

摘　　要：荧光转换型近红外发光二极管(NIR pc-LED)具有体积小、谱带宽和峰位易调谐等优点,是新一代NIR光源发展的前沿,其关键在于研发可被蓝光有效激发的高效率宽带近红外荧光粉。面向广泛研究的Cr^(3+)激活近红外发光材料,本文综述了发射峰在800~900 nm波段材料发展现状。基于磷酸盐、硼酸盐和硅锗酸盐等体系,阐述了其结构特征与近红外发光峰位、谱带宽度的关系,以及采用工艺优化、组分调节和共掺杂等方法调控近红外发光效率、热稳定性能的效果。Near-infrared phosphor-converted light-emitting diodes(NIR pc-LEDs)are expected to be the next-generation NIR light sources,with the advantages of small size,broad bandwidth,and easy tuning of emission peaks.The key for NIR pc-LEDs is to develop highly efficient broadband NIR phosphors that can be effectively excited by blue light.Cr^(3+)-activated NIR phosphors have been widely studied,and this paper reviews the development of Cr^(3+)-doped NIR phosphors peaked at 800~900 nm.Based on phosphates,pyroxenes,and other systems,the relationships between the structure and the emission peak and bandwidth are summarized.Furthermore,to enhance the NIR performance,strategies of synthesis technology optimization,components design,and co-doping sensitizers are discussed in detail.

关 键 词：近红外荧光粉 800~900nm Cr^(3+) Yb^(3+) 磷酸盐 硼酸盐 硅锗酸盐 

分 类 号：O644[理学—物理化学]