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作 者:范屹梁 孙玉润 付秋雪[1,2] 于淑珍 仇伯仓[3] 董建荣 Fan Yiliang;Sun Yurun;Fu Qiuxue;Yu Shuzhen;Qiu bocang;Dong Jianrong(School of Nano-Tech and Nano-Bionics,University of Science and Technology of China,Hefei 230026,China;Key Laboratory of Nano Devices and Applications,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China;School of Electronics and Communication Engineering,Quanzhou University of Information Engineering,Quanzhou 362000,China)
机构地区:[1]中国科学技术大学纳米技术与纳米仿生学院,合肥230026 [2]中国科学院苏州纳米技术与纳米仿生研究所纳米器件与应用重点实验室,江苏苏州215123 [3]泉州信息工程学院电子与通信工程学院,福建泉州362000
出 处:《半导体技术》2024年第5期449-454,共6页Semiconductor Technology
摘 要:垂直腔面发射激光器(VCSEL)是芯片级原子钟(CSAC)的主流光源,其光束质量会影响CSAC的各项性能。扩展VCSEL内部有效腔长能够以压缩冷腔线宽的方式压窄器件最终辐射激光的线宽,从而可以减小CSAC短时间内的计时频率噪声。根据所计算的VCSEL表面反射谱,将VCSEL中4层下分布式布拉格反射镜(DBR)的厚度由常规的四分之一波长增加至404 nm,压缩了VCSEL冷腔线宽,并生长了对应的外延结构,制备了通过增厚DBR扩展有效腔长的894 nm窄线宽VCSEL。测试结果表明,研制的VCSEL在90℃下波长为893.1 nm,功率为0.335 mW,线宽约为32 MHz,且具有稳定的偏振特性。Vertical cavity surface emitting lasers(VCSELs)are the mainstream light sources of chip⁃scale atomic clocks(CSACs),and their beam quality affects the performances of CSACs.Extending the internal effective cavity length of the VCSEL can narrow the linewidth of the final radiation laser of the device by reducing cold⁃cavity linewidth,so that the timing frequency noise of CSACs in a short period of time can be reduced.According to the calculated surface reflection spectrum of VCSELs,the thickness of 4 layers of bottom distributed Bragg reflectors(DBRs)in the VCSEL was increased from the conventional quarter⁃wavelength to 404 nm,which narrowed the cold⁃cavity linewidth of VCSELs.The corresponding epitaxial structure was grown,and 894 nm narrow linewidth VCSELs with extended DBRs were fabricated.The test results show that at 90℃the developed VCSEL has a wavelength of 893.1 nm,a power of 0.335 mW,a linewidth of about 32 MHz,and stable polarization characteristics.
关 键 词:垂直腔面发射激光器(VCSEL) 芯片级原子钟(CSAC) 有效腔长 分布式布拉格反射镜(DBR) 线宽
分 类 号:TN365[电子电信—物理电子学]
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