阴/非离子型表面活性剂对CMP后SiO_(2)颗粒的去除效果  

Removal Effect of Anionic/Nonionic Surfactants on SiO_(2) Particles After CMP

作　　者：刘鸣瑜 高宝红 梁斌[1,2] 霍金向 李雯浩宇 贺斌 Liu Mingyu;Gao Baohong;Liang Bin;Huo Jinxiang;Li Wenhaoyu;He Bin(School of Electronic and Information Engineering,Hebei University of Technology,Tianjin 300130,China;Institute of Microelectronic Technology and Material,Hebei University of Technology,Tianjin 300130,China)

机构地区：[1]河北工业大学电子信息工程学院,天津300130 [2]河北工业大学微电子技术与材料研究所,天津300130

出　　处：《半导体技术》2024年第5期461-470,共10页Semiconductor Technology

基　　金：国家自然科学基金(61704046)。

摘　　要：为了更有效地去除铜晶圆化学机械抛光(CMP)后清洗残留的SiO_(2)颗粒,选择了2种阴离子型表面活性剂(SLS、TD⁃40)和2种非离子型表面活性剂(AEO⁃5、JFC⁃6),通过接触角、表面张力、电化学、分子动力学模拟实验探究了4种表面活性剂在铜表面的润湿性、吸附构型及吸附稳定性。通过优化表面活性剂质量浓度,选择达到吸附稳定时的质量浓度配置4种表面活性剂来清洗铜晶圆,利用扫描电子显微镜观测铜表面形貌,对比它们的清洗效果。随后选择TD⁃40和JFC⁃6进行复配,研究复配后表面活性剂对硅溶胶颗粒的去除效果。实验结果表明,使用体积比为2∶1的TD⁃40与JFC⁃6进行复配得到的CMP清洗液对SiO_(2)颗粒的去除效果比单一表面活性剂的更好。In order to more effectively remove SiO_(2) particles left by post⁃chemical mechanical polishing(CMP)cleaning in copper wafers,two anionic surfactants(SLS,TD⁃40)and two nonionic surfactants(AEO⁃5,JFC⁃6)were selected,and the wettability,adsorption configuration and adsorption stability of the four surfactants on the copper surface were investigated through contact angle,surface ten⁃sion,electrochemistry and molecular dynamics simulation experiments.By optimizing the mass concen⁃tration of the surfactants,four surfactants were selected to clean copper wafers at the mass concentration to achieve adsorption stability,the copper surface morphology was observed by scanning electron microscope,and their cleaning effects were compared.Then two surfactants,TD⁃40 and JFC⁃6,were selected for compounding to study the removal effect of the compounded surfactants on silica sol particles.Experiment results show that the CMP cleaning fluid obtained by compounding TD⁃40 and JFC⁃6 with a volume ratio of 2∶1 is more effective in removing SiO_(2) particles than a single surfactant.

关 键 词：化学机械抛光(CMP) 吸附 颗粒去除 表面活性剂 复配 CMP后清洗 

分 类 号：TN305.97[电子电信—物理电子学]