碲硒锌镉单晶体的垂直布里奇曼法生长与性能研究  

Growth and Properties of Cadmium Zinc Telluride Selenide Single Crystals using Vertical Bridgman Method

作　　者：陈治 方晨旭 代轶文 李含冬 CHEN Zhi;FANG Chenxu;DAI Yiwen;LI Handong(School of Materials and Energy,University of Electronic Science and Technology of China,Chengdu 611731,CHN)

机构地区：[1]电子科技大学材料与能源学院,成都611731

出　　处：《半导体光电》2024年第1期105-110,共6页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(62374025,U20A20145)。

摘　　要：碲锌镉(CdZnTe)是目前最重要的室温半导体核辐射探测器材料。而在CdZnTe晶格中以Se替位部分Te得到碲硒锌镉(CdZnTeSe),将使得晶格中离子键的成分增加,从而提高晶体的硬度,降低Cd空位和Te夹杂物缺陷浓度,提升材料质量。为了获得适宜于核辐射探测器制备的CdZnTeSe晶体,研究了富Te条件下CdZnTeSe晶体的垂直布里奇曼法生长,成功制备出直径为21 mm、长度超过70 mm的Cd_(0.9)Zn_(0.1)Te_(0.97)Se_(0.03)单晶锭。所得Cd_(0.9)Zn_(0.1)Te_(0.97)Se_(0.03)晶体的(110)面X射线衍射摇摆半峰宽达到0.104°,而Te夹杂相的尺寸小于5μm,表明晶体具有良好结晶性。Cd_(0.9)Zn_(0.1)Te_(0.97)Se_(0.03)晶锭尾部的能带隙和红外透过率均低于晶锭的头部和中部,这可归因于Cd_(0.9)Zn_(0.1)Te_(0.97)Se_(0.03)在垂直布里奇曼法生长过程中存在潜热释放不足导致的晶体后续生长阶段的结晶性下降。而CdZnTeSe晶锭的头部和中部的电学性能指标达到了室温核辐射探测器制备要求。Cadmium zinc telluride(CdZnTe) is the most critical room-temperature semiconductor nuclear radiation detector material.A portion of Te was substituted by Se in the CdZnTe lattice to obtain cadmium zinc telluride selenide(CdZnTeSe);this led to an increased composition of the ionic bonds in the lattice,which improved the hardness of the crystal and reduced the concentration of Cd vacancies and Te inclusion defects,thereby enhancing the quality of the material.In this study,to obtain CdZnTeSe crystals suitable for the manufacture of nuclear radiation detectors,the growth of CdZnTeSe crystals under Te-rich conditions was investigated using the vertical Bridgman method,and Cd_(0.9)Zn_(0.1)Te_(0.97)Se_(0.03) single-crystal ingots with a diameter of 21 mm and a length of more than 70 mm were successfully prepared.The Cd_(0.9)Zn_(0.1)Te_(0.97)Se_(0.03) crystals thus obtained had an X-ray diffraction wobble half-peak width of 0.104° in the(110) plane,and the size of the Te intercalation phase was <5 μm,indicating that the crystals had good crystallinity.The energy bandgap and infrared(IR) transmittance of the Cd_(0.9)Zn_(0.1)Te_(0.97)Se_(0.03) ingot tails were lower than those of the head and middle of the ingot.This can be attributed to the decrease in crystallinity in the subsequent growth stages of the crystals due to the insufficient release of latent heat during the growth of Cd_(0.9)Zn_(0.1)Te_(0.97)Se_(0.03) using the vertical Bridgman method.The electrical performance indices of the head and middle of the CdZnTeSe ingots satisfied the requirements for the preparation of room-temperature radiation detectors.

关 键 词：CdZnTeSe 垂直布里奇曼法 晶体生长 结晶质量 

分 类 号：O782[理学—晶体学]