Insulation Design Rule for a Spacer in SF_(6)/N_(2)-filled DC Gas Insulated Apparatus  

作　　者：Hongyang Zhou Guoming Ma Meng Zhang Cong Wang Youping Tu Chengrong Li 

机构地区：[1]State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources and the Beijing Key Laboratory of High Voltage and EMC,North China Electric Power University,Beijing 102206,China

出　　处：《CSEE Journal of Power and Energy Systems》2024年第2期727-735,共9页中国电机工程学会电力与能源系统学报（英文）

基　　金：supported in part by the National Basic Research Program of China(973 Program)(2014CB239500);Young Elite Scientists Sponsorship Program by CAST YESS20160004;the Fundamental Research Funds for the Central Universities(2019MS006).

摘　　要：A recurring challenge of a DC SF_(6)/N_(2)-filled GIS/GIL apparatus is the charge accumulation at DC stress.The conventional design rules and knowledge of AC spacers may not be applicable for this new type of apparatus.A novel design rule is proposed considering the effect of accumulated charge on the threshold of electric field strength being resistant to the superposed voltage.A surface charge accumulation simulation model is introduced,and the key parameters in the simulation model are measured.In addition,an experimental platform for a 100 kV spacer flashover test is established.Spacer flashover tests under superimposed voltage with opposing polarities are carried out,and the withstanding voltage of the spacer is obtained.Finally,based on the proposed model,the threshold of the surface electric field strength(tangential component)on the DC spacer in SF_(6)/N_(2) mixed gases is discussed.For a reliable insulation design of a DC GIS/GIL apparatus filled with 0.7 MPa SF_(6)/N_(2),the threshold of surface electric field strength on the DC spacer is 12 kV/mm.The insulation design rule can be referenced in the design of a high-voltage DC SF_(6)/N_(2)-filled GIS/GIL apparatus.

关 键 词：Charge accumulation DC spacer flashover voltage SF_(6)/N_(2) threshold of surface electric field strength 

分 类 号：TM21[一般工业技术—材料科学与工程]