低温快速制备基于溶液工艺的高性能氧化铟薄膜及晶体管  

Low-temperature rapid preparation of high-performance indium oxide thin films and transistors based on solution technology

作　　者：张雪 Kim Bokyung Lee Hyeonju Park Jaehoon Zhang Xue;Kim Bokyung;Lee Hyeonju;Park Jaehoon(College of Ocean Science and Engineering,Shangdong University of Science and Technology,Qingdao 266590,China;Department of Electronic and Electrical Engineering,Hallym University,Chuncheon 24252,Republic of Korea)

机构地区：[1]山东科技大学海洋科学与工程学院,青岛266590 [2]翰林大学,春川24252

出　　处：《物理学报》2024年第9期236-243,共8页Acta Physica Sinica

基　　金：科技部中韩青年科学家交流计划(批准号:国科外[2021]5号)资助的课题.

摘　　要：利用脉冲紫外线辅助热退火在200℃的低温条件下,5 min内制备了基于溶液工艺的氧化铟薄膜及薄膜晶体管.对比传统热退火,研究了脉冲紫外线辅助热退火对氧化铟薄膜的表面形态、化学结构和电学特性的影响.实验结果表明,脉冲紫外线辅助热退火方式能够在短时间内实现改善氧化铟薄膜的质量及薄膜晶体管的性能.原子力显微镜和场发射扫描电子显微镜结果显示该薄膜表面较传统热退火制备薄膜表面更为致密平坦.X射线光电能谱测试表明,脉冲紫外线辅助热退火处理后会产生氧空位,从而提高载流子浓度,改善了氧化铟薄膜的导电性.此外,对比研究了紫外线辅助热退火对氧化铟薄膜晶体管电气性能的影响.结果表明器件的电学特性得到了明显改善,亚阈值摆幅降低至0.12 mV/dec,阈值电压为7.4 V,电流开关比高达1.29×107,场效应迁移率提升至1.27 cm^(2)/(V·s).因此,脉冲紫外线辅助热退火是一种简单、快速的退火方式,即使在低温条件下也能快速提高氧化铟薄膜和薄膜晶体管的性能.Indium oxide(In2O3)thin films and thin-film transistors(TFTs)based on the solution process are prepared by pulsed UV-assisted thermal annealing at a low temperature(200℃)for 5 min.The effects of pulsed UV-assisted thermal annealing on the surface morphology,chemical structure,and electrical properties of the In2O3 thin films are investigated,and they are compared with those of conventional thermal annealing(300℃,30 min).The experimental results show that the pulsed UV-assisted thermal annealing method can improve the quality of In2O3 thin film and the performance of TFT in a short period.The results of atomic force microscopy and field emission scanning electron microscopy show that the surface of the In2O3 film is denser and flatter than that of the conventional thermally annealed film,and X-ray photoelectron spectroscopy tests show that the pulsed UV-assisted thermal annealing process generates oxygen vacancies,which increases the carrier concentration and improves the electrical conductivity of the In2O3 film.In addition,the effect of pulsed UV-assisted thermal annealing on the electrical characteristics of In2O3 TFTs is investigated in a comparative way.The results show that the electrical characteristics of the device are significantly improved:the subthreshold swing decreases to 0.12 mV/dec,the threshold voltage is 7.4 V,the current switching ratio is as high as 1.29×107,and the field effect mobility is enhanced to 1.27 cm^(2)·V–1·s–1.Therefore,pulsed UV-assisted thermal annealing is a simple and fast annealing method,which can rapidly improve the performances of In2O3 thin film and TFTs,even under low-temperature conditions.

关 键 词：脉冲紫外线辅助热退火 氧化铟 溶液法 薄膜晶体管 

分 类 号：TN321.5[电子电信—物理电子学] TB383.2[一般工业技术—材料科学与工程]