真空慢退火工艺对4H-SiC核辐射探测器性能的影响  

Effect of the vacuum slow annealing process on the performance of 4H-SiC nuclear radiation detectors

作　　者：杨凯 张春林[1] 李海霞[2] 李占奎[2] 李荣华[2] 卢子伟[2] YANG Kai;ZHANG Chun-lin;LI Hai-xia;LI Zhan-kui;LI Rong-hua;LU Zi-wei(School of Mathematics and Science,Lanzhou Jiaotong University,Lanzhou 730070,China;Institute of Modern Physics,Chinese Academy of Sciences,Lanzhou 730000,China)

机构地区：[1]兰州交通大学数理学院,兰州730070 [2]中国科学院近代物理研究所,兰州730000

出　　处：《兰州大学学报（自然科学版）》2024年第2期248-252,共5页Journal of Lanzhou University(Natural Sciences)

基　　金：国家自然科学基金青年基金项目(12005267);甘肃省自然科学基金项目(21JR11RA069)。

摘　　要：制备了一种肖特基二极管结构的4H-SiC辐射探测器.在真空环境下,用不同的温度对欧姆电极进行慢退火处理,达到良好的欧姆接触.对其反向I-V特性和能量分辨率进行测试对比,欧姆电极在800℃条件下性能最好,在全耗尽状态下能量分辨率为1.36%,耐压测试运行稳定, 200 V偏压下漏电流仅有463 pA.与其他退火温度相比,该工艺下的4H-SiC探测器运行稳定,具有漏电流低、能量分辨率高的优势.A batch of 4H-SiC detectors with the Schottky diode structure was fabricated,and the Ohmic electrodes were slow-annealed at various temperatures to achieve good Ohmic contact in a vacuum environment.The reverse I-V characteristics and energy resolution were compared and analysed.The Ohmic electrode performed best at 800°C,with an energy resolution of 1.36%at full depletion.The 4H-SiC detector was stable at 200 V bias,with a low leakage current and high energy resolution compared to other annealing temperatures.

关 键 词：4H-SiC探测器 欧姆电极 退火 能量分辨率 

分 类 号：TL814[核科学技术—核技术及应用]