Dual-Schottky-junctions coupling device based on ultra-longβ-Ga_(2)O_(3)single-crystal nanobelt and its photoelectric properties  

作　　者：Haifeng Chen Xiaocong Han Chenlu Wu Zhanhang Liu Shaoqing Wang Xiangtai Liu Qin Lu Yifan Jia Zhan Wang Yunhe Guan Lijun Li Yue Hao 

机构地区：[1]Key Laboratory of Advanced Semiconductor Devices and Materials,School of Electronic Engineering,Xi’an University of Posts andT elecommunications,Xi’an 710121,China [2]State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology,School of Microelectronics,Xidian University,Xi'an 710071,China

出　　处：《Journal of Semiconductors》2024年第5期90-98,共9页半导体学报（英文版）

基　　金：supported by Natural Science Basic Research Program in Shaanxi Province of China(No.2023-JCYB-574);National Natural Science Foundation of China(No.62204203).

摘　　要：High qualityβ-Ga_(2)O_(3)single crystal nanobelts with length of 2−3 mm and width from tens of microns to 132μm were synthesized by carbothermal reduction method.Based on the grown nanobelt with the length of 600μm,the dual-Schottky-junctions coupling device(DSCD)was fabricated.Due to the electrically floating Ga_(2)O_(3)nanobelt region coupling with the double Schottky-junctions,the current I_(S2)increases firstly and rapidly reaches into saturation as increase the voltage V_(S2).The saturation current is about 10 pA,which is two orders of magnitude lower than that of a single Schottky-junction.In the case of solar-blind ultraviolet(UV)light irradiation,the photogenerated electrons further aggravate the coupling physical mechanism in device.I_(S2)increases as the intensity of UV light increases.Under the UV light of 1820μW/cm^(2),I_(S2)quickly enters the saturation state.At V_(S2)=10 V,photo-to-dark current ratio(PDCR)of the device reaches more than 104,the external quantum efficiency(EQE)is 1.6×10^(3)%,and the detectivity(D*)is 7.5×10^(12)Jones.In addition,the device has a very short rise and decay times of 25−54 ms under different positive and negative bias.DSCD shows unique electrical and optical control characteristics,which will open a new way for the application of nanobelt-based devices.

关 键 词：β-Ga_(2)O_(3)nanobelt carbothermal reduction UV light dual-Schottky coupling device 

分 类 号：TN303[电子电信—物理电子学] TB383.1[一般工业技术—材料科学与工程]