ZnSb/Ti_(3)C_(2)T_(x)MXene van der Waals heterojunction for flexible near-infrared photodetector arrays  

作　　者：Chuqiao Hu Ruiqing Chai Zhongming Wei La Li Guozhen Shen 

机构地区：[1]State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [2]Center of Materials Science and Optoelectronic Engineering,University of Chinese Academy of Sciences,Beijing 100049,China [3]School of Integrated Circuits and Electronics,Beijing Institute of Technology,Beijing 100081,China

出　　处：《Journal of Semiconductors》2024年第5期99-105,共7页半导体学报（英文版）

基　　金：supported by National Natural Science Foundation of China(51672308,51972025,61888102,and 62004187).

摘　　要：Two-dimension(2D)van der Waals heterojunction holds essential promise in achieving high-performance flexible near-infrared(NIR)photodetector.Here,we report the successful fabrication of ZnSb/Ti_(3)C_(2)T_(x)MXene based flexible NIR photodetector array via a facile photolithography technology.The single ZnSb/Ti_(3)C_(2)T_(x)photodetector exhibited a high light-to-dark current ratio of 4.98,fast response/recovery time(2.5/1.3 s)and excellent stability due to the tight connection between 2D ZnSb nanoplates and 2D Ti_(3)C_(2)T_(x)MXene nanoflakes,and the formed 2D van der Waals heterojunction.Thin polyethylene terephthalate(PET)substrate enables the ZnSb/Ti_(3)C_(2)T_(x)photodetector withstand bending such that stable photoelectrical properties with non-obvious change were maintained over 5000 bending cycles.Moreover,the ZnSb/Ti_(3)C_(2)T_(x)photodetectors were integrated into a 26×5 device array,realizing a NIR image sensing application.

关 键 词：ZnSb nanoplates Ti_(3)C_(2)T_(x)MXene van der Waals heterojunction flexible photodetector image sensing 

分 类 号：TN215[电子电信—物理电子学]