Multi-wavelength nanowire micro-LEDs for future high speed optical communication  

作　　者：Ayush Pandey Zetian Mi 

机构地区：[1]Department of Electrical Engineering and Computer Science,University of Michigan,Ann Arbor,MI 48109,USA

出　　处：《Opto-Electronic Advances》2024年第3期1-3,共3页光电进展（英文）

摘　　要：The future of optoelectronics is directed towards small-area light sources,foremost being microLEDs.However,their use has been inhibited so far primarily due to fabrication and integration challenges,which impair efficiency and yield.Recently,bottom-up nanostructures grown using selective area epitaxy have garnered attention as a solution to the aforementioned issues.Prof.Lan Fu et.al.have used this technique to demonstrate uniform p-i-n core-shell InGaAs/InP nanowire array light emitting diodes.The devices are capable of voltage and geometry-controlled multi-wavelength and high-speed operations.Their publication accentuates the wide capabilities of bottom-up nanostructures to resolve the difficulties of nanoscale optoelectronics.

关 键 词：COMMUNICATION high operations 

分 类 号：TN929.1[电子电信—通信与信息系统] TN312.8[电子电信—信息与通信工程]