Self-powered broadband kesterite photodetector with ultrahigh specific detectivity for weak light applications  

作　　者：Guang-Xing Liang Chuan-Hao Li Jun Zhao Yi Fu Zi-Xuan Yu Zhuang-Hao Zheng Zheng-Hua Su Ping Fan Xiang-Hua Zhang Jing-Ting Luo Liming Ding Shuo Chen 

机构地区：[1]Shenzhen Key Laboratory of Advanced Thin Films and Applications,Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province,College of Physics and Optoelectronic Engineering,Shenzhen University,Shenzhen,China [2]Institut des Sciences Chimiques de Rennes,Universite de Rennes,Rennes,France [3]Center for Excellence in Nanoscience(CAS),Key Laboratory of Nanosystem and Hierarchical Fabrication(CAS),National Center for Nanoscience and Technology,Beijing,China

出　　处：《SusMat》2023年第5期682-696,共15页可持续发展材料（英文）

基　　金：National Natural Science Foundation of China,Grant/Award Numbers:62074102,62104156,21961160720;Open Research Fund of Songshan Lake Materials Laboratory,Grant/Award Number:2021SLABFK02;Guangdong Basic and Applied Basic Research Foundation,Grant/Award Numbers:2022A1515010979,2023A1515011256;Science and Technology Plan Project of Shenzhen,Grant/Award。

摘　　要：Kesterite Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)is a promising candidate for photodetector(PD)applications thanks to its excellent optoelectronic properties.In this work,a green solution-processed spin coating and selenization-processed thermodynamic or kinetic growth of high-quality narrow bandgap kesterite CZTSSe thin film is developed.A self-powered CZTSSe/CdS thin-film PD is then successfully fabricated.Under optimization of light absorber and heterojunction interface,especially tailoring the defect and carrier kinetics,it can achieve broadband response from300 to 1300 nm,accompaniedwith a high responsivity of 1.37A/W,specific detectivity(D*)up to 4.0×10^(14)Jones under 5 nW/cm^(2),a linear dynamic range(LDR)of 126 dB,and a maximum Ilight/Idark ratio of 1.3×10^(8)within the LDR,and ultrafast response speed(rise/decay time of 16 ns/85 ns),representing the leading-level performance to date,which is superior to those of commercial andwell-researched photodiodes.Additionally,an imaging system with a 905nm laser is built for weak light response evaluation,and can respond to 718 pW weak light and infrared imaging at a wavelength as low as 5 nW/cm2.It has also been employed for photoplethysmography detection of pulsating signals at both the finger and wrist,presenting obvious arterial blood volume changes,demonstrating great application potential in broadband and weak light photodetection scenarios.

关 键 词：DETECTIVITY KESTERITE PHOTODETECTOR thin film weak light detection 

分 类 号：TN2[电子电信—物理电子学]