Non-epitaxial growth of highly oriented transition metal dichalcogenides with density-controlled twin boundaries  

作　　者：Juntong Zhu Zhili Hu Shasha Guo Ruichun Luo Maolin Yu Ang Li Jingbo Pang Minmin Xue Stephen J.Pennycook Zheng Li Zhuhua Zhang Wu Zhou 

机构地区：[1]School of Physical Sciences,CAS Key Laboratory of Vacuum Physics,University of Chinese Academy of Sciences,Beijing 100049,China [2]State Key Laboratory of Mechanics and Control for Aerospace Structures,Key Laboratory for Itelligent Nano Materials and Devices of Ministry of Education,and Institute for Frontier Science,Nanjing University of Aeronautics and Astronautics,Nanjing 210013,China [3]School of Materials Science and Engineering,Nanyang Technological University,Singapore 639798,Singapore [4]Environmental Chemistry and Materials Centre,Nanyang Environment and Water Research Institute,Nanyang Technological University,Singapore 637141,Singapore

出　　处：《The Innovation》2023年第6期30-37,共8页创新（英文）

基　　金：National Key R&D Program of China(2018YFA0305800);Natural Science Foundation of China(51872285);Beijing Outstanding Young Scientist Program(BJJWZYJ H01201914430039);CAS Project for Young Scientists in Basic Research(YSBR-003);Fundamental Research Funds for the Central Universities;National Key R&D Program of China(2019YFA0705400);Natural Science Foundation of China(1221101035,12225205,22073048);computations were in part performed at the High-performance Computational Center at NUAA;Singapore Ministry of Education AcRF Tier 2(MOE2019-T2-2-105 and MOE-MOET2EP101210006)and AcRF Tier 1(RG7/21).

摘　　要：Twin boundaries(TBs)in transition metal dichalcogenides(TMDs)constitute distinctive one dimensional electronic systems,exhibiting intriguing physical and chemical properties that have garnered significant attention in the fields of quantum physics and electrocatalysis.However,the controlled manipula-tion of TBs in terms of density and specific atomic configurations remains a fomidable challenge.In this study,we present a non-epitaxial growth approach that enables the controlled and large scale fabrication of homoge-neous catalytically active TBs in monolayer TMDs on arbitrary substrates.Notably,the density achieved using this strategy is six times higher than that observed in convention chemical vapor deposition(CVD)-grown sam-ples.Through rigorous experimental analysis and multigrain Wulff construc tion simulations,we elucidate theroleof regulating themetal source diffusion process,which serves as the key factor for inducing the self-oriented growth ofTMD grains and the formation of unified TBs.Furthermore,we demonstrate that this novel growth mode can be readily incorporated into the conventional CVD growth method by making a simple modification of the growth tempera-ture profle,thereby offering a universal approach for engineering of grain boundaries in two-dimensional materials.

关 键 词：GRAIN TRANSITION tempera 

分 类 号：O413[理学—理论物理]