基于束腰劈裂偏振合束高亮度窄线宽半导体激光器  

High Brightness Narrow-linewidth Semiconductor Laser Based on Beam Waist Splitting Polarization Combining

作　　者：赵宇飞 佟存柱[2] 魏志鹏[1] ZHAO Yufei;TONG Cunzhu;WEI Zhipeng(Key Laboratory of High Power Semiconductor Lasers,School of Physics,Changchun University of Science and Technology,Changchun 130022,China;State Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China)

机构地区：[1]长春理工大学理学院高功率半导体激光国家重点实验室,吉林长春130022 [2]中国科学院长春光学精密机械与物理研究所,发光学及应用国家重点实验室,吉林长春130033

出　　处：《发光学报》2024年第3期500-505,共6页Chinese Journal of Luminescence

基　　金：国家自然科学基金(62025506)~~。

摘　　要：将一个808 nm宽发射区半导体激光器应用于纵模选择束腰劈裂偏振合束外腔中,实现了高光束质量、高亮度和窄线宽的激光输出。所获激光输出功率为5.08 W,快慢轴光束质量M2=1.85×18.2,慢轴光束质量较自由运转激光器提高48%,输出激光亮度B=22.74 MW·cm^(-2)·sr^(-1),是原激光器自由运转的1.3倍。所获激光光谱线宽为0.47 nm,压缩至原激光器自由运转的光谱宽度的0.14。A 808 nm semiconductor laser was applied to a mode-selected and beam waist splitting polarization com⁃bining external cavity.A laser with high beam quality high brightness and narrow-linewidth was obtained.The beam quality of the fast and slow axes of the obtained laser was M2=1.85×18.2,the slow axis beam quality was improved by 48%.The output power and brightness of the laser was 5.08 W and B=22.74 MW·cm^(-2)·sr^(-1) respectively.The brightness was 1.3 times that of the laser under free running.The spectral linewidth of obtained laser was 0.47 nm,0.14 times compressed to the same laser.

关 键 词：半导体激光器 合束 外腔 

分 类 号：TN248.4[电子电信—物理电子学]