SiO_(2)溅射功率对Fe_(40)Co_(40)B_(20)-SiO_(2)软磁纳米颗粒膜磁性能的影响  

Effect of SiO_(2)sputtering power on the magnetic properties of Fe_(40)Co_(40)B_(20)-SiO_(2)granular films

作　　者：蒋云川 余忠 李启帆 邬传健 蒋晓娜 孙科 兰中文 JIANG Yun-chuan;YU Zhong;LI Qi-fan;WU Chuan-jian;JIANG Xiao-na;SUN Ke;LAN ZHONG-wen(School of Materials and Energy,University of Electronic Science and Technology of China,Chengdu 610054,China)

机构地区：[1]电子科技大学材料与能源学院,四川成都610054

出　　处：《磁性材料及器件》2024年第2期1-4,共4页Journal of Magnetic Materials and Devices

摘　　要：用磁控溅射法沉积Fe_(40)Co_(40)B_(20)-SiO_(2)软磁纳米颗粒膜,对其微观结构和磁性能进行了分析。研究发现,随着SiO_(2)溅射功率的增高,Fe_(40)Co_(40)B_(20)-SiO_(2)薄膜粗糙度、截止频率、磁导率、饱和磁化强度均降低,薄膜电阻率增大。在SiO_(2)溅射功率为500 W时,Fe_(40)Co_(40)B_(20)-SiO_(2)薄膜电阻率高达1973μΩ·cm,且截止频率也高达3.67 GHz。相较于未添加SiO_(2)的薄膜,其电阻率有了显著提升,且同样拥有较高的截止频率。因此,通过该方法制备的Fe_(40)Co_(40)B_(20)-SiO_(2)薄膜可有效应用于GHz频段的软磁薄膜电感。Fe_(40)Co_(40)B_(20)-SiO_(2)thin films were deposited by magnetron sputtering,and their microstructure and magnetic properties were analyzed.It was found that with the increase of SiO_(2)sputtering power,the roughness,ferromagnetic resonance frequency,permeability and saturation magnetization of Fe_(40)Co_(40)B_(20)-SiO_(2)films decrease,and the resistivity of the films increases.When the SiO_(2)sputtering power is 500 W,the resistivity of Fe_(40)Co_(40)B_(20)-SiO_(2)film is as high as 1973μΩ·cm,and the cut-off frequency is as high as 3.67 GHz.Compared with that of film without SiO_(2),its resistivity has been greatly improved,and cutoff frequency increases slightly.Therefore,the Fe_(40)Co_(40)B_(20)-SiO_(2)thin film prepared by this method can be effectively applied to the soft magnetic thin film inductor in GHz band.

关 键 词：Fe_(40)Co_(40)B_(20)-SiO_(2)薄膜 磁控溅射 SiO_(2)溅射功率 磁性能 电阻率 截止频率 

分 类 号：TM271.2[一般工业技术—材料科学与工程]