硅光电倍增管偏置补偿电源电路的设计分析  

Design and Analysis of Silicon Photomultiplier Bias Compensation Power Supply

作　　者：葛莉 刘金莲[1] 李昌[2] GE Li;LIU Jinlian;LI Chang(Hebei Women’s Vocational College,Shijiazhuang 050091,China;Shijiazhuang Art School,Shijiazhuang 050800,China)

机构地区：[1]河北女子职业技术学院,河北石家庄050091 [2]石家庄市艺术学校,河北石家庄050800

出　　处：《通信电源技术》2024年第6期10-12,共3页Telecom Power Technology

摘　　要：硅光电倍增管是一种先进的固态光子探测技术,继承了传统光电倍增管(Photomultiplier Tube,PMT)的高性能特征,并以其独特的架构集成了大量工作在盖革模式下的SPAD,具有显著优势。硅光电倍增管(Silicon Photomultiplier,SiPM)的工作击穿电压会随着温度变化而出现漂移现象,影响内部增益的稳定性,并对图像重建精度和能量分辨率等关键性能指标产生不利影响。基于此,研发了一种能够实时适应环境温度变化的动态补偿电路,实现对SiPM的偏置电压精密调控,有效抑制因温度导致的增益漂移效应,使SiPM器件在不同温度条件下均能保持偏置电压稳定。Silicon Photomultiplier Tube is an advanced solid-state photon detection technology,which inherits the high performance characteristics of traditional photomultiplier tube(PMT)and integrates a large number of SPAD arrays working in Geiger mode with its unique architecture,which has obvious advantages.The breakdown voltage of Silicon Photomultiplier(SiPM)will drift with the change of temperature,which will affect the stability of internal gain and adversely affect key performance indexes such as image reconstruction accuracy and energy resolution.Based on this,this paper develops a dynamic compensation circuit that can adapt to the change of environmental temperature in real time,realizes the precise regulation of the bias voltage of SiPM,effectively suppresses the gain drift effect caused by temperature,and makes SiPM devices keep the bias voltage stable under different temperature conditions.

关 键 词：硅光电倍增管(SiPM) 偏置补偿电源 动态补偿电路 

分 类 号：TM46[电气工程—电器]