高功率微波与射频模块耦合仿真研究  

Simulation Study on Coupling of High Power Microwave and RF Module

作　　者：岳嘉瑞 张妙瑜[1] 段雁超 YUE Jiarui;ZHANG Miaoyu;DUAN Yanchao

机构地区：[1]西安石油大学光电油气测井与检测教育部重点实验室 [2]昭远科技(西安)有限责任公司

出　　处：《计量与测试技术》2024年第4期63-65,共3页Metrology & Measurement Technique

基　　金：陕西省自然科学基础研究计划资助项目(项目编号:2024JC-YBMS-241)。

摘　　要：针对高功率微波(以下简称:HPM)对集成电路的耦合效应问题,利用电磁仿真软件对某型射频模块模型进行高功率微波辐照仿真;研究并计算频率为1GHz、3GHz和5GHz的HPM在射频模块上的耦合信号与电磁分布情况。结果表明:射频模块中,部分电容的电流、电感的电压与HPM频率呈正相关趋势,且当天线的中心频率与HPM频率越相近时,芯片的天线端口耦合的电压越大。To address the coupling effect of high-power microwave on integrated circuits, electromagnetic simulation software is used to simulate high-power microwave irradiation on a certain type of RF module model.We studied and calculated the coupling signal and electromagnetic distribution of high-power microwaves with frequencies of 1GHz, 3GHz, and 5GHz on the RF module.The results showed that as the frequency increased, the current of some capacitors and the voltage of inductors in the RF module also showed an increasing trend.When the HPM frequency was close to the center frequency of the antenna in the RF module, the voltage coupled to the antenna port of the chip in the RF module increased.

关 键 词：电磁脉冲 高功率微波 PCB电路 

分 类 号：TN40[电子电信—微电子学与固体电子学] TN015