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作 者:段嘉欣 江林[2] 郑国彬 丁长春 黄敬国[2] 刘奕 高艳卿[2] 周炜[2] 黄志明[2] DUAN Jia-Xin;JIANG Lin;ZHENG Guo-Bin;DING Chang-Chun;HUANG Jing-Guo;LIU Yi;GAO Yan-Qing;ZHOU Wei;HUANG Zhi-Ming(School of Science,Xihua University,Chengdu 610039,China;Key Laboratory of Infrared Science and Technology,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;Cixi Institute of Biomedical Engineering,Ningbo Institute of Materials Technology and Engineering,Chinese Academy of Sciences,Ningbo 315201,China)
机构地区:[1]西华大学理学院,四川成都610039 [2]中国科学院上海技术物理研究所红外科学与技术重点实验室,上海200083 [3]中国科学院宁波材料技术与工程研究所慈溪生物医学工程研究所,浙江宁波315201
出 处:《红外与毫米波学报》2024年第2期150-157,共8页Journal of Infrared and Millimeter Waves
基 金:国家自然科学基金面上项目(52071329);上海市自然科学基金(20ZR1466300);航空科学基金项目(202000024090006)。
摘 要:具有半导体-金属态相变性质的二氧化钒材料可用于光电探测器的激光致盲防护。本文报道了基于磁控溅射法制备二氧化钒薄膜材料的结构、形貌特性,以及在不同温度下的光学性质。使用椭偏光谱法测量了20~100℃下可见-近红外波段二氧化钒材料的椭偏参数,利用Gaussian、Lorentz模型获取了薄膜在相变前的光学性质,结合Drude模型拟合获取了材料在相变后的光学特性,获取了材料在300~1700 nm之间的变温折射率和消光系数等参数。变功率下1550 nm红外激光透射率的实验测试研究表明,VO_(2)薄膜样品的相变阈值功率为12 W/cm^(2),相变前后透射率由51%减小到15%~17%,开关率为69%。Vanadium dioxide materials,which show semiconductor-metal phase transition,can be used for protection of photoelectric detectors against laser blinding weapons.The structure,morphology and optical properties of vanadium dioxide thin films prepared by radio frequency magnetron sputtering at different temperatures were reported.The visible to infrared ellipsometric parameters of vanadium dioxide film at 20-100℃were measured by an ellipsometer.The optical properties of vanadium dioxide films before the phase transition were obtained by Gaussian and Lorentz model,and the optical properties after the phase transition were obtained by adding a Drude model.The refractive index and extinction coefficient at varied temperatures between 300 nm and 1700 nm were obtained.The transmittance spectra of 1550 nm infrared laser at varied power densities show that the threshold power of phase transformation for the VO_(2)film is about 12 W/cm^(2),where the transmittance decreases sharply from 51%to 15%-17%,and the switching rate is about 69%.
关 键 词:激光防护 二氧化钒薄膜 半导体-金属态相变 红外光学性质
分 类 号:TN3[电子电信—物理电子学]
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