Rational design of AgGaS/ZnS/ZnS quantum dots with a near-unity photoluminescence quantum yield via double shelling scheme  

作　　者：H.X.Lu H.Liu Z.Z.Fu Y.Y.Chen H.Q.Dai Z.Hu W.L.Zhang R.Q.Guo 

机构地区：[1]Institute for Electric Light Sources,School of Information Science and Technology,Fudan University,Shanghai 200433,China [2]Institute of Future Lighting,Academy for Engineering and Technology,Fudan University,Shanghai 200433,China [3]Yiwu Research Institute of Fudan University,Yiwu,Zhejiang 322000,China [4]Zhongshan-Fudan Joint Innovation Center,Zhongshan 528437,China

出　　处：《Journal of Materials Science & Technology》2024年第2期235-242,共8页材料科学技术（英文版）

基　　金：supported by the National Natural Science Foun-dation of China(No.62074044);Zhongshan-Fudan Joint Innova-tion Center,Jihua Laboratory Projects of Guangdong Province(No.X190111UZ190);Shanghai Post-doctoral Excellence Program(No.2021016);Shanghai Rising-Star program(No.22YF1402000).

摘　　要：In this study,a two-step method was used to synthesize highly luminescent AgGaS/ZnS/ZnS quantum dots(QDs).In the first step,an inner ZnS shell was formed via a one-pot method,which resulted in a smaller lattice mismatch between the AgGaS core and the outer ZnS shell,thereby facilitating the formation of a thick outer shell.After the two-step shelling process,the synthesized AgGaS/ZnS/ZnS QDs showed an excellent photoluminescence quantum yield(PLQY)of 96.4%with a peak wavelength of 508 nm,repre-senting the highest PLQY reported thus far for AgGaS QDs.Furthermore,the effect of halogen ions in Zn precursors on the shelling process was investigated.It was proposed that the capacity of halogen ions to coordinate with the QDs influenced the balance between Zn cation diffusion and ZnS shelling reaction.Specifically,the ZnS shelling reaction was dominant when ZnCl_(2)was employed,while Zn cation diffusion was the dominant process under the I^(−)-rich environment.This work provides insights into the interfacial restructuring during the ZnS shelling and offers a clear map for the tailored synthesis of core/shell QDs.

关 键 词：AgGaS Quantum dots PHOTOLUMINESCENCE Core/shell Alloyed core/shell interface 

分 类 号：TB383.1[一般工业技术—材料科学与工程] O657.3[理学—分析化学]