Enhanced memristor performance via coupling effect of oxygen vacancy and ferroelectric polarization  

作　　者：Zhi Yun Yue Zhi Dong Zhang Zhan Jie Wang 

机构地区：[1]Shenyang National Laboratory for Materials Science,Institute of Metal Research,Chinese Academy of Sciences,Shenyang 110016,China [2]School of Materials Science and Engineering,University of Science and Technology of China,Shenyang 110016,China [3]School of Materials Science and Engineering,Shenyang University of Technology,Shenyang 110870,China

出　　处：《Journal of Materials Science & Technology》2024年第4期139-146,共8页材料科学技术（英文版）

基　　金：the Central Government Guiding Local Science and Technology Development Funds of Liaoning Province in 2021(No.2021JH6/10500168);the National Basic Research Program(No.2017YFA0206302)of Chinafor theirsupport tothis work.

摘　　要：As a new type of nonvolatile memory,the resistive memristor has broad application prospects in in-formation storage and neural computing based on its excellent resistive switching(RS)performance.At present,it is still a great challenge to improve both ferroelectric polarization and leakage current to achieve a high RS on/offratio of ferroelectric memristors.Herein,epitaxial Pb(Zr_(0.40)Ti_(0.60))O_(3)(PZT)thin films with low content Ca doping were deposited on the Nb:SrTiO_(3)substrate to prepare PCZT/NSTO het-erostructures and their RS behaviors were studied.The research findings show that compared with pure PZT film,the ferroelectric polarization of 1-mol%-Ca-doped PZT film is slightly improved,while the leak-age current is increased by three orders of magnitude.Therefore,the RS on/offratio reaches 2.5×10^(5),about three orders of magnitude higher than pure PZT films.The theoretical analysis reveals that the RS behavior of PCZT/NSTO heterostructures is controlled by the PCZT/NSTO interfacial barrier and the space charge-limited current mechanism.Our results demonstrate that the ferroelectricity and electricity of ferroelectric thin films can be improved simultaneously by doping low-content Ca ions to increase the RS performance,which provides a good reference for the development of high-performance ferroelectric memristor devices.

关 键 词：Ferroelectric memristor Ca-doped PZT Ferroelectric polarization Oxygen vacancies Resistive switching 

分 类 号：TQ134.11[化学工程—无机化工] TB34[一般工业技术—材料科学与工程]