VGF法磷化铟单晶炉加热器对炉内热场分布影响的研究  

Influence of VGF Indium Phosphide Single Crystal Furnace Heater on the Thermal Field Distribution in the Furnace

作　　者：艾家辛 万洪平 钱俊兵[1] 韦华 AI Jiaxin;WAN Hongping;QIAN Junbing;WEI Hua(Faculty of Civil Aviation and Aeronautical,Kunming University of Science and Technology,Kunming 650500,China;China General Nuclear Power New Energy Holding Co.,LTD.Yunnan branch,Kunming 650000,China;Yunnan Xinyao Semiconductor Materials Co.,Ltd.,Kunming 650503,China)

机构地区：[1]昆明理工大学民航与航空学院,昆明650500 [2]中国广核新能源控股有限公司云南分公司,昆明650000 [3]云南鑫耀半导体材料有限公司,昆明650503

出　　处：《人工晶体学报》2024年第5期781-791,共11页Journal of Synthetic Crystals

基　　金：云南省省市一体化专项(202202AH080009)。

摘　　要：磷化铟(InP)是一种重要的化合物半导体,在通信、航空航天和人工智能等领域具有广泛的应用。InP单晶生长质量的优劣取决于其生长炉内热场的稳定与温控。InP晶体工业生产中广泛采用的垂直梯度凝固(VGF)法是在磷化铟单晶生长炉中构建高温、封闭、稳定及可控的热场,但因炉内缺乏直接观测和完整的参数监测手段,利用计算机数值仿真对炉内晶体生长的温度场进行科学分析,以获取最佳的生长温控条件,俨然成为有效且重要的方法。本文基于ANSYS有限元软件及炉内元件实测参数,建立了InP单晶生长系统热场三维物理和数学模型,基于磷化铟单晶生长过程中的温度离散数据,对所建模型对比和验证,获得了与实际生产温度数据吻合良好的效果(温度偏差控制在3%以内),验证了所建模型的有效性。基于此模型,本文对生产条件下四段加热器温度波动对热场分布影响进行了探讨,并对炉内四段加热器的温度波动对炉内低温区、高温区及料管中心温度影响规律进行了研究,所得结论对揭示工业生产过程中InP单晶炉热场的分布规律及调节方法具有一定的指导意义。As an important compound semiconductor,Indium phosphide(InP)is extensively utilized in the fields like communication,aerospace and artificial intelligence.The quality of InP single crystal growth depends on the stability and temperature control of the thermal field inside the growth furnace.As a widely used method in the industrial production of InP crystals,the vertical gradient freeze(VGF)method is used to construct a high-temperature,closed,stable and controllable thermal field in indium phosphide single crystal growth furnace.Due to the lack of direct observation and complete parameter monitoring methods in the furnace,the temperature field of crystal growth in the furnace is scientifically analyzed using computer numerical simulation to obtain the best growth temperature control conditions,which has become an effective and important method.This article establishes a three-dimensional physical and mathematical model of the thermal field of InP single crystal growth system based on ANSYS finite element software and measured parameters of furnace components.Based on temperature discrete data during the growth process of indium phosphide single crystal,the constructed model is compared and validated,and good agreement with actual production temperature data is obtained(temperature deviation is controlled within 3%),verifying the effectiveness of the constructed model.Based on this model,this article explores the influence of temperature fluctuations of the four stage heaters on the distribution of the thermal field under production conditions,and studies the influence of temperature fluctuations of the four stage heaters on the low-temperature zone,high-temperature zone and material pipe center temperature in the furnace.The conclusions obtained have certain guiding significance for revealing the distribution and adjustment methods of the thermal field in InP single crystal furnaces in industrial production processes.

关 键 词：磷化铟单晶 垂直梯度凝固法 热场 数值模拟 半导体 晶体生长 

分 类 号：O782[理学—晶体学]