铟锡氧(ITO)和氟锡氧(FTO)透明导电薄膜的表征与分析  

Characterization and Analysis of Indium Tin Oxide (ITO) and Fluotin Oxide (FTO) Transparent Conductive Films

作　　者：初学峰[1,2] 黄林茂 张祺 谢意含 胡小军 CHU Xuefeng;HUANG Linmao;ZHANG Qi;XIE Yihan;HU Xiaojun(Key Laboratory of Energy Conservation in Cold Buildings,Ministry of Education,Jilin Jianzhu University,Changchun 130118,China;School of Electrical Engineering and Computer,Jilin Jianzhu University,Changchun 130118,China)

机构地区：[1]吉林建筑大学寒地建筑综合节能教育部重点实验室,长春130118 [2]吉林建筑大学电气与计算机学院,长春130118

出　　处：《人工晶体学报》2024年第5期848-854,共7页Journal of Synthetic Crystals

基　　金：吉林省科技发展计划(20220201068GX)。

摘　　要：本文以射频(RF)磁控溅射方法制备的ITO薄膜和购置的ITO及FTO薄膜为研究对象,通过紫外可见分光光度计表征薄膜样品的透射率,结果表明ITO和FTO薄膜均展现出良好的光学透过率。采用扫描电子显微镜(SEM)观察薄膜样品的表面形貌,所有薄膜样品的表面较为均匀。通过X射线光电子能谱仪(XPS)表征薄膜样品表面的元素、组成、价态和电子态信息,结果表明制备方式与退火处理等因素影响了薄膜样品表面的元素组成与价态,这些信息与薄膜的电学和光学性能具有一定的关联。上述研究结果可以为新型透明导电薄膜的设计和性能提升提供参考。In this paper,ITO films prepared by RF magnetron sputtering,and ITO and FTO films purchased were used as research objects.Ultraviolet-visible spectrophotometer was used to characterize the film transmittance of the samples.The results show that both ITO and FTO films exhibit good optical transmittance.Scanning electron microscope(SEM)was used to observe the surface morphology of the films,and the surface of all the films was relatively uniform.X-ray photoelectron spectroscopy(XPS)was used to characterize the elemental,composition,valence and electronic state information of the sample surface.The results show that the preparation method and annealing treatment affect the elemental composition and valence of the sample surface,and this information has a certain correlation with the electrical and optical properties of the film.The above research results provide reference for the design and performance improvement of new transparent conductive films.

关 键 词：透明导电氧化物 磁控溅射 退火 表面形貌 X射线光电子能谱 透过率 

分 类 号：O484[理学—固体物理] TN305.3[理学—物理] TN386.1[电子电信—物理电子学]