空间选择性缺陷管理制备高性能碳基CsPbI_(3)钙钛矿太阳能电池  

Spatially selective defect management of CsPbI_(3)films for high-performance carbon-based inorganic perovskite solar cells

作　　者：王海亮 张啟先 林则东 刘慧丛 魏晓震 宋永发 律春宇 李卫平 朱立群 王科翔 崔振华 王兰 林常青 殷鹏刚 宋廷鲁 白阳 陈棋 杨世和 陈海宁 Hailiang Wang;Qixian Zhang;Zedong Lin;Huicong Liu;Xiaozhen Wei;Yongfa Song;Chunyu Lv;Weiping Li;Liqun Zhu;Kexiang Wang;Zhenhua Cui;Lan Wang;Changqing Lin;Penggang Yin;Tinglu Song;Yang Bai;Qi Chen;Shihe Yang;Haining Chen(School of Materials Science and Engineering,Beihang University,Beijing 100191,China;Guangdong Provincial Key Lab of Nano-Micro Materials Research,School of Advanced Materials,Shenzhen Graduate School,Peking University,Shenzhen 518055,China;Institute of Biomedical Engineering,Shenzhen Bay Laboratory,Shenzhen 518107,China;School of Chemistry,Beihang University,Beijing 100191,China;Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications,MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices,Experimental Center of Advanced Materials,School of Materials Science&Engineering,Beijing Institute of Technology,Beijing 100081,China;School of Internet of Things Engineering,Jiangnan University,Wuxi 214122,China;School of Physical Science and Technology,Guangxi University,Nanning 530004,China;Experimental Center of Advanced Materials,School of Materials Science&Engineering,Beijing Institute of Technology,Beijing 100081,China)

机构地区：[1]School of Materials Science and Engineering,Beihang University,Beijing 100191,China [2]Guangdong Provincial Key Lab of Nano-Micro Materials Research,School of Advanced Materials,Shenzhen Graduate School,Peking University,Shenzhen 518055,China [3]Institute of Biomedical Engineering,Shenzhen Bay Laboratory,Shenzhen 518107,China [4]School of Chemistry,Beihang University,Beijing 100191,China [5]Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications,MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices,Experimental Center of Advanced Materials,School of Materials Science&Engineering,Beijing Institute of Technology,Beijing 100081,China [6]School of Internet of Things Engineering,Jiangnan University,Wuxi 214122,China [7]School of Physical Science and Technology,Guangxi University,Nanning 530004,China [8]Experimental Center of Advanced Materials,School of Materials Science&Engineering,Beijing Institute of Technology,Beijing 100081,China

出　　处：《Science Bulletin》2024年第8期1050-1060,共11页科学通报（英文版）

基　　金：supported by the National Natural Science Foundation of China(21875013,U2001217);the Beijing Natural Science Foundation(2182031);Shenzhen Basic Research(JCYJ20220818101018038)。

摘　　要：Defects formed at the surface,buried interface and grain boundaries(GB)of CsPbI_(3)perovskite films considerably limit photovoltaic performance.Such defects could be passivated effectively by the most prevalent post modification strategy without compromising the photoelectric properties of perovskite films,but it is still a great challenge to make this strategy comprehensive to different defects spatially distributed throughout the films.Herein,a spatially selective defect management(SSDM)strategy is developed to roundly passivate various defects at different locations within the perovskite film by a facile one-step treatment procedure using a piperazine-1,4-diium tetrafluoroborate(PZD(BF_(4))_(2))solution.The small-size PZD^(2+)cations could penetrate into the film interior and even make it all the way to the buried interface of CsPbI_(3)perovskite films,while the BF_(4)^(-)anions,with largely different properties from I^(-)anions,mainly anchor on the film surface.Consequently,virtually all the defects at the surface,buried interface and grain boundaries of CsPbI_(3)perovskite films are effectively healed,leading to significantly improved film quality,enhanced phase stability,optimized energy level alignment and promoted carrier transport.With these films,the fabricated CsPbI_(3)PSCs based on carbon electrode(C-PSCs)achieve an efficiency of18.27%,which is among the highest-reported values for inorganic C-PSCs,and stability of 500 h at 85℃with 65%efficiency maintenance.

关 键 词：CsPbI_(3) DEFECTS Spatially selective defect management Carbon electrode 

分 类 号：TM914.4[电气工程—电力电子与电力传动] TB34[一般工业技术—材料科学与工程]